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32 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs, , , , , , , , and . in Proc. International Semiconductor Device Research Symposium, Washington D.C., (2003)32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs, , , , , , , , , and . Electronics Letters, (2003)Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs., , , , , , , , and . Microelectronics Reliability, 44 (7): 1101-1107 (2004)32$\backslash$,GHz MMIC distributed amplifier based on N-channel SiGe MODFETs, , , , , , , , , and . Electronics Letters, (2003)32$\backslash$,GHz and 40$\backslash$,GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs, , , , , , , , and . in Proc. International Semiconductor Device Research Symposium, Washington D.C., (2003)Large Signal Modelling including Low-Frequency Dispersion of N-channel SiGe MODFETs and MMIC Applications, , , , , , , and . Solid-State Electronics, 48 (8): 1433--1441 (2004)A SiGe HEMT Mixer IC with Low Conversion Loss, , , , , , , and . in Proc. 11th GaAs Symposium, European Microwave Week, Munich, Germany, (2003)