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Large Signal Modelling including Low-Frequency Dispersion of N-channel SiGe MODFETs and MMIC Applications

, , , , , , , and . Solid-State Electronics, 48 (8): 1433--1441 (2004)

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32$\backslash$,GHz MMIC distributed amplifier based on N-channel SiGe MODFETs, , , , , , , , , and . Electronics Letters, (2003)32 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs, , , , , , , , and . in Proc. International Semiconductor Device Research Symposium, Washington D.C., (2003)32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs, , , , , , , , , and . Electronics Letters, (2003)Large Signal Modelling including Low-Frequency Dispersion of N-channel SiGe MODFETs and MMIC Applications, , , , , , , and . Solid-State Electronics, 48 (8): 1433--1441 (2004)High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT's., , , , , and . Microelectronics Reliability, 43 (9-11): 1719-1723 (2003)32$\backslash$,GHz and 40$\backslash$,GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs, , , , , , , , and . in Proc. International Semiconductor Device Research Symposium, Washington D.C., (2003)A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range, , , , and . in Proc. 10th GaAs Symposium, European Microwave Week, Milano, Italy, (2002)