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Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology., , and . ICICDT, page 1-4. IEEE, (2015)Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET., , , , , , , , and . ESSDERC, page 209-212. IEEE, (2012)Novel back-biased UTBB lateral SCR for FDSOI ESD protections., , , , , and . ESSDERC, page 222-225. IEEE, (2013)Silicon on Insulator Technology.. The VLSI Handbook, CRC Press, (1999)Low-frequency noise in bare SOI wafers: Experiments and model., , , and . ESSDERC, page 286-289. IEEE, (2015)Novel AlGaN/GaN omega-FinFETs with excellent device performances., , , , , , , , and . ESSDERC, page 323-326. IEEE, (2016)Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications., , , , , and . ESSDERC, page 74-77. IEEE, (2018)Thin-Film FD-SOI BIMOS Topologies for ESD Protection., , , and . IRPS, page 1-5. IEEE, (2019)Z2-FET used as 1-transistor high-speed DRAM., , , and . ESSDERC, page 197-200. IEEE, (2012)Sharp-switching Z2-FET device in 14 nm FDSOI technology., , , , and . ESSDERC, page 250-253. IEEE, (2015)