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Temperature and Gate Leakage Influence on the Z2-FET Memory Operation.

C. Marquez, S. Navarro, C. Navarro, N. Salazar, P. Galy, S. Cristoloveanu, and F. Gámiz. ESSDERC, page 238-241. IEEE, (2019)

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Francisco Costa Garcia University of Stuttgart

Dr. Preston Francisco Rodrigues University of Stuttgart

Other publications of authors with the same name

Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power.C. Navarro, C. Marquez, S. Navarro, C. Lozano, S. Kwon, Y. Kim, and F. Gámiz. IEEE Access, (2019)Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator.R. Ferreiro, C. Sampedro, N. Seoane, M. Aldegunde, A. García-Loureiro, A. Godoy, and F. Gámiz. IJHPCA, 27 (4): 483-492 (2013)Size-dependent electron mobility in InAs nanowires.E. Marin, F. Ruiz, A. Godoy, I. Tienda-Luna, and F. Gámiz. ESSDERC, page 317-320. IEEE, (2014)Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs.V. Velayudhan, F. Gámiz, J. Martín-Martínez, R. Rodríguez, M. Nafría, and X. Aymerich. Microelectronics Reliability, 53 (9-11): 1243-1246 (2013)Temperature and Gate Leakage Influence on the Z2-FET Memory Operation.C. Marquez, S. Navarro, C. Navarro, N. Salazar, P. Galy, S. Cristoloveanu, and F. Gámiz. ESSDERC, page 238-241. IEEE, (2019)A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo.F. Vecil, J. Mantas, M. Cáceres, C. Sampedro, A. Godoy, and F. Gámiz. Computers & Mathematics with Applications, 67 (9): 1703-1721 (2014)Reconfigurable distributed network control system for industrial plant automation.J. Ortega, F. Palomo, A. Luque, C. Aracil, J. Quero, D. Carrión, F. Gámiz, P. Revilla, J. Pérez-Tinao, M. Moreno and 2 other author(s). IEEE Trans. Industrial Electronics, 51 (6): 1168-1180 (2004)On the Low-Frequency Noise Characterization of Z2-FET Devices.C. Marquez, C. Navarro, S. Navarro, J. Padilla, L. Donetti, C. Sampedro, P. Galy, Y. Kim, and F. Gámiz. IEEE Access, (2019)Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator.C. Medina-Bailon, T. Sadi, C. Sampedro, J. Padilla, L. Donetti, V. Georgiev, F. Gámiz, and A. Asenov. NMA, volume 11189 of Lecture Notes in Computer Science, page 273-280. Springer, (2018)Three-dimensional multi-subband simulation of scaled FinFETs.L. Donetti, C. Sampedro, F. Ruiz, A. Godoy, and F. Gámiz. ESSDERC, page 180-183. IEEE, (2017)

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Disambiguation of "Gámiz, Francisco"

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Temperature and Gate Leakage Influence on the Z2-FET Memory Operation.

Please choose a person to relate this publication to

Francisco Costa Garcia University of Stuttgart

Dr. Preston Francisco Rodrigues University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Gámiz, Francisco"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Temperature and Gate Leakage Influence on the Z2-FET Memory Operation.

Please choose a person to relate this publication to

Francisco Costa Garcia University of Stuttgart

Dr. Preston Francisco Rodrigues University of Stuttgart

Other publications of authors with the same name

Disambiguation

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Temperature and Gate Leakage Influence on the Z2-FET Memory Operation.