PUMA

academical publication management
collect, organize, and share publications

( en | de )

 

Disambiguation of "Agnello, Paul D."

Author of the publication

copydeleteadd this publication to your clipboard
Identification of Gate Electrode Discontinuities in Submicron CMOS Technologies, and Effect on Circuit Performance

, , and . IEEE Transactions on Electron Devices, 43 (5): 759-765 (May 1996)
DOI: 10.1109/16.491253

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

D. Marino

PD Dr. Simon Paulus University of Stuttgart

Prof. Dr. Paul Keller University of Stuttgart

Paul Betz University of Stuttgart

Moritz Paul University of Stuttgart

 

Other publications of authors with the same name

Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond., , , , , , , , , and 8 other author(s). ICICDT, page 1-4. IEEE, (2012)Identification of Gate Electrode Discontinuities in Submicron CMOS Technologies, and Effect on Circuit Performance, , and . IEEE Transactions on Electron Devices, 43 (5): 759-765 (May 1996)A High Performance 0.25/spl mu/m CMOS, , , , , , , , , and 17 other author(s). Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 93-94. Piscataway, New Jersey, IEEE, (1993)45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications., , , , , , , , , and 10 other author(s). IBM Journal of Research and Development, 55 (3): 5 (2011)Process requirements for continued scaling of CMOS-the need and prospects for atomic-level manipulation.. IBM Journal of Research and Development, 46 (2-3): 317-338 (2002)Performance-optimized gate-first 22-nm SOI technology with embedded DRAM., , , , , , , , , and 6 other author(s). IBM Journal of Research and Development, (2015)Submicron CMOS gate electrode discontinuity : electrical signature and effect on circuit speed, , , , and . Technical digest : International Electron Devices Meeting 1993 : Washington, DC, December 5 - 8, 1993, page 891-894. Piscataway, New Jersey, IEEE, (1993)Silicides and local interconnections for high-performance VLSI applications., , , and . IBM Journal of Research and Development, 39 (4): 403-418 (1995)Optimization of silicon technology for the IBM System z9., , , , , , , , , and 5 other author(s). IBM Journal of Research and Development, 51 (1/2): 5-18 (2007)