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Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective., , , , , , and . ESSCIRC, page 55-58. IEEE, (2016)Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing., , , , , , , , , and 3 other author(s). CoRR, (2019)Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures., , , , , , , , , and 1 other author(s). ESSDERC, page 106-109. IEEE, (2017)System-level assessment and area evaluation of Spin Wave logic circuits., , , , , , , and . NANOARCH, page 25-30. IEEE Computer Society/ACM, (2014)Area and routing efficiency of SWD circuits compared to advanced CMOS., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Material selection and device design guidelines for two-dimensional materials based TFETs., , , , , , and . ESSDERC, page 54-57. IEEE, (2017)Non-volatile spin wave majority gate at the nanoscale., , , , , , , , and . CoRR, (2016)Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout Circuitry., , , , , , , , and . ESSCIRC, page 63-66. IEEE, (2021)Towards high-performance polarity-controllable FETs with 2D materials., , , , , , , , and . DATE, page 637-641. IEEE, (2018)Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing., , , , , , , , , and 19 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)