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Surface-passivated high-resistivity silicon as a true microwave substrate

, , , , , , , and . IEEE Transactions on Microwave Theory and Techniques, 53 (7): 2340-2347 (2005)
DOI: 10.1109/TMTT.2005.850435

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Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems, , , , and . Digest of papers : 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2004, page 69-72. Piscataway, New Jersey, IEEE, (2004)A Wideband Distributed Silicon Driver for 10 Gb/s External Modulators, , , and . Proceedings 2003 : ProRISC, SAFE : November 25 - 27 2003, Veldhoven, the Netherlands, page 186-189. Utrecht, Technology Foundation, (2003)Surface-passivated high-resistivity silicon as a true microwave substrate, , , , , , , and . IEEE Transactions on Microwave Theory and Techniques, 53 (7): 2340-2347 (2005)A scalable physical model for coplanar waveguide transition in flip-chip applications, , , , and . 2004 24th International Conference on Microelectronics, 1, page 345-348. Piscataway, New Jersey, IEEE, (2004)A common-base linear rf power amplifier for 3G cellular applications., , and . CICC, page 579-582. IEEE, (2008)A Single Chip 1.8 GHz LNA and Power Amplifier With Improved Isolation Using Micromachining, , , , , , and . Book of abstracts : SAFE2001 Semiconductor Advances for Future Electronics, ProRISC2001 Program for Research on Integrated Systems and Circuits, SeSens2001 Semiconductor Sensor and Actuator Technology, Utrecht, STW, Technology Foundation, (2001)A 53 GHz DCO for mm-wave WPAN., , and . CICC, page 571-574. IEEE, (2008)A 1.8 GHz Integrated LNA Using a Novel RF Si Technology, , , , , and . 2002 proceedings : SAFE-ProRISC-SeSens, November 27 - 29, 2002, Veldhoven, the Netherlands, page 30-34. (2002)