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Monolithic SiGe Photodiode Technology

G. Wöhl, C. Parry, E. Kasper, M. Jutzi, and M. Berroth. Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), page 78--83. Stuttgart, Germany, (2002)

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Prof. Dr. Gerd Blind University of Stuttgart

Gerd Reichardt University of Stuttgart

Lisa Gerdes University of Stuttgart

Jan-Niklas Gerdes University of Stuttgart

Hon. -Prof. Dr. rer. nat. Gerd Wolff University of Stuttgart

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Zero biased Ge-on-Si photodetector on a thin buffer with a bandwidth of 3.2GHz at 1300nmM. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper. Materials Science in Semiconductor Processing, 8 (1-3): 423--427 (2005)Zero Biased Ge-on-Si Photodetector on a Thin Buffer with a Bandwidth of 3.2GHz at 1300nmM. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper. Materials Science in Semiconductor Processing, 8 (1-3): 423-427 (2005)SiGe PIN Photodetector for Infrared Optical Fiber Links Operating at 1.25 Gbit/sM. Jutzi, M. Berroth, G. Wöhl, C. Parry, M. Oehme, M. Bauer, C. Schöllhorn, and E. Kasper. Applied Surface Science, 224 (1-4): 170-174 (2004)SiGe pin-photodetectors integrated on silicon substrates for optical fiber linksG. Wöhl, C. Parry, E. Kasper, M. Jutzi, and M. Berroth. IEEE International Solid-State Circuits Conference (ISSCC), page 374--375. San Francisco, CA, USA, (2003)40-Gbit/s Ge-Si photodiodesM. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper. Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF). Digest of Papers, page 303--307. San Diego, CA, USA, (2005)Ge-on-Si Vertical Incidence Photodiodes with 39-GHz BandwidthM. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper. IEEE Photonics Technology Letters, 17 (7): 1510-1512 (2005)Monolithic SiGe Photodiode TechnologyG. Wöhl, C. Parry, E. Kasper, M. Jutzi, and M. Berroth. Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), page 78--83. Stuttgart, Germany, (2002)Special Etch Technologies for Ge/Si DevicesG. Wöhl, M. Oehme, C. Parry, E. Kasper, M. Jutzi, M. Berroth, and E. Voorneman. (2003)High-speed germanium photodiodes monolithically integrated on silicon with MBEM. Oehme, J. Werner, M. Jutzi, G. Wöhl, E. Kasper, and M. Berroth. Thin Solid Films, 508 (1-2): 393--395 (2006)SiGe PIN photodetector for infrared optical fiber links operating at 1.25 Gbit/sM. Jutzi, M. Berroth, G. Wöhl, C. Parry, M. Oehme, M. Bauer, C. Schöllhorn, and E. Kasper. Applied Surface Science, 224 (1-4): 170--174 (2004)