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A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.

M. Cimino, H. Lapuyade, M. Matos, T. Taris, Y. Deval, and J. Begueret. J. Electronic Testing, 23 (6): 593-603 (2007)

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Other publications of authors with the same name

RF CMOS body-effect circuits.T. Taris, J. Begueret, H. Lapuyade, and Y. Deval. Microelectronics Journal, 37 (11): 1251-1260 (2006)Millimeter-Waves building block design methodology in BiCMOS technology.T. Taris, Y. Deval, R. Severino, C. Ameziane, D. Belot, and J. Begueret. ICECS, page 968-971. IEEE, (2009)Windowed phase comparator for an 80Gbit/s CDR.Q. Beraud-Sudreau, O. Mazouffre, M. Pignol, L. Baguena, C. Neveu, J. Begueret, and T. Taris. ICECS, page 185-188. IEEE, (2012)COTS-based modules for far-field radio frequency energy harvesting at 900MHz and 2.4GHz.T. Taris, L. Fadel, L. Oyhenart, and V. Vigneras. NEWCAS, page 1-4. IEEE, (2013)A new frequency synthesizers stabilization method based on a mixed Phase Locked Loop and Delay Locked Loop architecture.P. de Peslouan, C. Majek, T. Taris, Y. Deval, D. Belot, and J. Begueret. ISCAS, page 482-485. IEEE, (2011)Co-design of a wideband double-balanced active mixer and transformer-based baluns for 77 GHz radar applications.A. Mariano, B. Leite, T. Taris, and J. Begueret. Microelectronics Journal, 45 (11): 1566-1574 (2014)Design of a 0.9 V 2.45 GHz Self-Testable and Reliability-Enhanced CMOS LNA.M. Cimino, H. Lapuyade, Y. Deval, T. Taris, and J. Begueret. J. Solid-State Circuits, 43 (5): 1187-1194 (2008)A dual mode 2.4-GHz CMOS low noise amplifier employing body biasing.A. Mabrouki, T. Taris, Y. Deval, and J. Begueret. ICECS, page 627-630. IEEE, (2009)Design of a TID-tolerant low-level offset operational amplifier.Y. Piccini, H. Lapuyade, Y. Deval, C. Morche, J. Seyler, F. Goutti, and T. Taris. NEWCAS, page 1-4. IEEE, (2013)Energy Efficiency in Multiple Antenna Machine-Type Communications With Reconfigurable RF Transceivers.E. dos Santos, A. Mariano, G. Brante, B. Leite, R. Souza, and T. Taris. IEEE Access, (2019)

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A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.

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A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.