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A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.

M. Cimino, H. Lapuyade, M. Matos, T. Taris, Y. Deval, and J. Begueret. J. Electronic Testing, 23 (6): 593-603 (2007)

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A New Laser System for X-Rays Flashes Sensitivity Evaluation.D. Lewis, H. Lapuyade, Y. Deval, Y. Maidon, F. Darracq, R. Briand, and P. Fouillat. IOLTW, page 111-. IEEE Computer Society, (2001)A Robust 130nm-CMOS Built-In Current Sensor Dedicated to RF Applications.M. Cimino, H. Lapuyade, M. Matos, T. Taris, Y. Deval, and J. Begueret. European Test Symposium, page 151-158. IEEE Computer Society, (2006)Fault Coverage on RF VCOs and BIST for Wafer Sort Using Peak-to-Peak Voltage Detectors.L. Testa, H. Lapuyade, Y. Deval, J. Carbonéro, and J. Begueret. J. Electronic Testing, 26 (3): 355-365 (2010)An Overview of the Applications of a Pulsed Laser System for SEU Testing.V. Pouget, P. Fouillat, D. Lewis, H. Lapuyade, L. Sarger, F. Roche, S. Duzellier, and R. Ecoffet. IOLTW, page 52-. IEEE Computer Society, (2000)Voltage controlled delay line with phase quadrature outputs for 0.9-4 GHz F-DLL dedicated to zero-IF multi-standard LO.C. Majek, Y. Deval, H. Lapuyade, and J. Begueret. SBCCI, ACM, (2009)Low-cost backside laser test method to pre-characterize the COTS IC's sensitivity to Single Event Effects.F. Darracq, H. Lapuyade, N. Buard, P. Fouillat, R. Dufayel, and T. Carrière. Microelectronics Reliability, 43 (9-11): 1615-1619 (2003)Design of a TID-tolerant low-level offset operational amplifier.Y. Piccini, H. Lapuyade, Y. Deval, C. Morche, J. Seyler, F. Goutti, and T. Taris. NEWCAS, page 1-4. IEEE, (2013)A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.M. Cimino, H. Lapuyade, M. Matos, T. Taris, Y. Deval, and J. Begueret. J. Electronic Testing, 23 (6): 593-603 (2007)A Low-Power and Low Silicon Area Testable CMOS LNA Dedicated to 802.15.4 Sensor Network Applications.M. Cimino, M. Matos, H. Lapuyade, T. Taris, Y. Deval, and J. Begueret. ICECS, page 383-386. IEEE, (2006)Front Side and Backside OBIT Mappings applied to Single Event Transient Testing.D. Lewis, V. Pouget, T. Beauchêne, H. Lapuyade, P. Fouillat, A. Touboul, F. Beaudoin, and P. Perdu. Microelectronics Reliability, 41 (9-10): 1471-1476 (2001)

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A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.

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PUMA

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.

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A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications.