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Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120 nm and 65 nm technology., , , , , , and . Microelectronics Reliability, 48 (8-9): 1322-1326 (2008)Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy., , , , , and . Microelectronics Reliability, 47 (9-11): 1523-1528 (2007)Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node., , , and . Microelectronics Reliability, 46 (9-11): 1498-1503 (2006)Extraction of local thin-film solar cell parameters by bias-dependent IR-LBIC., , and . Microelectronics Reliability, 50 (9-11): 1899-1902 (2010)Physical Techniques for Chip-Backside IC Debug in Nanotechnologies., , , and . IEEE Design & Test of Computers, 25 (3): 250-257 (2008)Backside E-Beam Probing on Nano scale devices., , , , , , , , and . ITC, page 1-9. IEEE Computer Society, (2007)Security Risks Posed by Modern IC Debug and Diagnosis Tools., , and . FDTC, page 3-11. IEEE Computer Society, (2013)Impact of back side circuit edit on active device performance in bulk silicon ICs., , , , , and . ITC, page 9. IEEE Computer Society, (2005)Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing., , , , , and . Microelectronics Reliability, 49 (9-11): 1158-1164 (2009)On charge sensors for FIB attack detection., , and . HOST, page 128-133. IEEE Computer Society, (2012)