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A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS

, , , , , , , and . IEEE Radio Frequency Integrated Circuits Symposium (RFIC), page 215--218. Boston, MA, USA, (2019)
DOI: 10.1109/RFIC.2019.8701786

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