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Disambiguation of "Kallfass, I."

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A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology

, , , , , , and . Microwave and Wireless Components Letters, IEEE, 19 (6): 410--412 (June 2009)
DOI: 10.1109/LMWC.2009.2020042

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Univ. -Prof. Dr. -Ing. Ingmar Kallfass University of Stuttgart

Online Junction Temperature Estimation of Power Semiconductor Devices using Neural Network and Model-Based Design, , and . IEEE EUROCON 2023 : 20th International Conference on Smart Technologies, page 187-192. IEEE, (2023)
Online Junction Temperature Estimation of Power Semiconductor Devices using Neural Network and Model-Based Design, , and . IEEE EUROCON 2023 : 20th International Conference on Smart Technologies, page 187-192. IEEE, (2023)LETSCOPE : Lifecycle Extensions Through Software-Defined Predictive Control of Power Electronics, , , , , , , , , and 3 other author(s). IEEE EUROCON 2023 : 20th International Conference on Smart Technologies, page 665-670. IEEE, (2023)

I. Steinwart

I. Dudic

Nimra Iqbal University of Stuttgart

Exploring the link between socio-economic and physical structure in cities to inform heat adaptation options : the case of Stuttgart, , , , , and . 2023 Joint Urban Remote Sensing Event (JURSE), IEEE, (2023)

Cheng-I Ho University of Stuttgart

 

Other publications of authors with the same name

300 GHz Wireless Link Employing a Photonic Transmitter and Active Electronic Receiver with a Transmission Bandwidth of 54 GHz, , , , , , , and . IEEE Transactions on Terahertz Science and Technology, (2020)Intelligent Methods for Test and Reliability, , , , , , , , , and 25 other author(s). 2022 Design, Automation &amp$\mathsemicolon$ Test in Europe Conference &amp$\mathsemicolon$ Exhibition (DATE), IEEE, (March 2022)A High-Pass Distributed Amplifier Operating from 215 GHz up to 315 GHz in a 35 nm InGaAs mHEMT Technology, , , , , , , and . in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Paris, (2024)The 2023 terahertz science and technology roadmap, , , , , , , , , and 44 other author(s). Journal of Physics D Applied Physics, 56 (22): 223001 (April 2023)An Accurate Simulation Model for Silicon Carbide Power Devices Based on BSIM3 Including Thermal Effects and Package Parasitics, , and . in Proc. PCIM Europe Conference, (2025)10 MHz Accelerated Gate-Switching Stress Tests Utilizing In-Situ Degradation Monitoring for SiC MOSFETs, , and . in Proc. PCIM Europe Conference, (2025)High Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperarure Compensation, , , , , , , , and . in Proc. European Microwave Integrated Circuits Conference (EuMIC), Paris, (2024)Modulation Scheme for Dynamic AC Power Cycling Based on the Opposition Method, , and . in Proc. IEEE Energy Conversion Congress and Exposition (ECCE), Phoenix, (October 2024)Self-Injection-Locked Kerr Soliton Microcombs With Photonic Wire Bonds For Use in Terahertz Communications, , , , , , , , , and 7 other author(s). 2023 Conference on Lasers and Electro-Optics (CLEO), page 1-2. (May 2023)Single Chip Junction Temperature Measurement for Paralleled SiC MOSFETs, , , and . in Proc. ECCE Conference, (2022)