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Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress.

, , , , , , and . Microelectronics Reliability, 48 (4): 531-536 (2008)

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Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors., , , , , , and . Microelectronics Reliability, 45 (2): 341-348 (2005)Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress., , , , , , and . Microelectronics Reliability, 48 (4): 531-536 (2008)A threshold voltage variation cancellation technique for analogue peripheral circuits of a display array using poly-Si TFTs., , , , , and . ISCAS, IEEE, (2006)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , and . ESSDERC, page 142-145. IEEE, (2016)Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs., , , , , and . ICECS, page 953-956. IEEE, (2012)Variability of nanoscale triple gate FinFETs: Prediction and analysis method., , , , , and . ICECS, page 710-713. IEEE, (2014)Effects of hot carriers in offset gated polysilicon thin-film transistors., , , , and . Microelectronics Reliability, 46 (2-4): 311-316 (2006)Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors., , , and . Microelectronics Reliability, 43 (4): 671-674 (2003)Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors., , , , and . Microelectronics Reliability, 46 (12): 2032-2037 (2006)Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors., , , , , and . Microelectronics Reliability, 51 (3): 556-559 (2011)