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17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.

T. Song, W. Rim, S. Park, Y. Kim, J. Jung, G. Yang, S. Baek, J. Choi, B. Kwon, Y. Lee, S. Kim, G. Kim, H. Won, J. Ku, S. Paak, E. Jung, S. Park, and K. Kim. ISSCC, page 306-307. IEEE, (2016)

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Yang Yang University of Stuttgart

Guangpu Yang University of Stuttgart

Yang Wang University of Stuttgart

Xiliu Yang University of Stuttgart

Qing Yang University of Stuttgart

Other publications of authors with the same name

A 14 nm FinFET 128 Mb SRAM With V $_MIN$ Enhancement Techniques for Low-Power Applications.T. Song, W. Rim, J. Jung, G. Yang, J. Park, S. Park, Y. Kim, K. Baek, S. Baek, S. Oh and 10 other author(s). J. Solid-State Circuits, 50 (1): 158-169 (2015)17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.T. Song, W. Rim, S. Park, Y. Kim, J. Jung, G. Yang, S. Baek, J. Choi, B. Kwon, Y. Lee and 8 other author(s). ISSCC, page 306-307. IEEE, (2016)A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization.T. Song, W. Rim, S. Park, Y. Kim, G. Yang, H. Kim, S. Baek, J. Jung, B. Kwon, S. Cho and 3 other author(s). J. Solid-State Circuits, 52 (1): 240-249 (2017)12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis.T. Song, H. Kim, W. Rim, Y. Kim, S. Park, C. Park, M. Hong, G. Yang, J. Do, J. Lim and 13 other author(s). ISSCC, page 208-209. IEEE, (2017)

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Disambiguation of "Yang, Giyong"

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17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.

Please choose a person to relate this publication to

Yang Yang University of Stuttgart

Guangpu Yang University of Stuttgart

Yang Wang University of Stuttgart

Xiliu Yang University of Stuttgart

Qing Yang University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Yang, Giyong"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.

Please choose a person to relate this publication to

Yang Yang University of Stuttgart

Guangpu Yang University of Stuttgart

Yang Wang University of Stuttgart

Xiliu Yang University of Stuttgart

Qing Yang University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
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Chicago
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17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.