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A 77GHz transceiver in 90nm CMOS., , , , and . ISSCC, page 310-311. IEEE, (2009)13.3 A 56Gb/s W-band CMOS wireless transceiver., , , , , , , , , and 8 other author(s). ISSCC, page 242-243. IEEE, (2016)Submillimeter-wave InP HEMT amplifiers with current-reuse topology., , , , , , and . RWS, page 250-252. IEEE, (2013)300-GHz Amplifier in 75-nm InP HEMT Technology., , , , , , , , , and . IEICE Transactions, 99-C (5): 528-534 (2016)Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis., , , , , , , , and . IEICE Transactions, 98-C (12): 1112-1119 (2015)Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers., , , , , , , and . IEICE Transactions, 100-C (5): 417-423 (2017)A fully integrated triple-band CMOS power amplifier for WCDMA mobile handsets., , , , , , , , , and 10 other author(s). ISSCC, page 86-88. IEEE, (2012)60 and 77GHz Power Amplifiers in Standard 90nm CMOS., , , , and . ISSCC, page 562-563. IEEE, (2008)A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology., , , , , , and . J. Solid-State Circuits, 42 (3): 637-646 (2007)A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors., , , , , , , , , and . IEICE Transactions, 95-A (2): 498-505 (2012)