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Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers., , , , , , , and . IEICE Transactions, 100-C (5): 417-423 (2017)60 and 77GHz Power Amplifiers in Standard 90nm CMOS., , , , and . ISSCC, page 562-563. IEEE, (2008)A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors., , , , , , , , , and . IEICE Transactions, 95-A (2): 498-505 (2012)Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz., , , , , , and . IEICE Transactions, 102-C (6): 462-465 (2019)Millimeter-Wave GaN HEMT for Power Amplifier Applications., , , , , , , , and . IEICE Transactions, 97-C (10): 923-929 (2014)A 77GHz transceiver in 90nm CMOS., , , , and . ISSCC, page 310-311. IEEE, (2009)A Fault-Value Injection Approach for Multiple-Weight-Fault Tolerance of MNNs., , and . IJCNN (3), page 515-520. IEEE Computer Society, (2000)0-7695-0619-4.Submillimeter-wave InP HEMT amplifiers with current-reuse topology., , , , , , and . RWS, page 250-252. IEEE, (2013)Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager., , and . IEICE Transactions, 92-C (9): 1124-1129 (2009)300-GHz Amplifier in 75-nm InP HEMT Technology., , , , , , , , , and . IEICE Transactions, 99-C (5): 528-534 (2016)