Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.

B. Cheng, X. Wang, A. Brown, J. Kuang, D. Reid, C. Millar, S. Nassif, and A. Asenov. ISCAS, page 2339-2342. IEEE, (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Millar, Campbell

add a person with the name Millar, Campbell

Other publications of authors with the same name

An advanced statistical compact model strategy for SRAM simulation at reduced VDD.P. Asenov, D. Reid, S. Roy, C. Millar, and A. Asenov. ESSDERC, page 205-208. IEEE, (2012)SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.B. Cheng, X. Wang, A. Brown, J. Kuang, D. Reid, C. Millar, S. Nassif, and A. Asenov. ISCAS, page 2339-2342. IEEE, (2013)Circuit design perspectives for Ge FinFET at 10nm and beyond.S. Sinha, L. Shifren, V. Chandra, B. Cline, G. Yeric, R. Aitken, B. Cheng, A. Brown, C. Riddet, C. Alexandar und 2 andere Autor(en). ISQED, Seite 57-60. IEEE, (2015)Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models.P. Asenov, D. New, D. Reid, C. Millar, S. Roy, und A. Asenov. ICICDT, Seite 29-32. IEEE, (2013)Progress on carbon nanotube BEOL interconnects.B. Uhlig, J. Liang, J. Lee, R. Ramos, A. Dhavamani, N. Nagy, J. Dijon, H. Okuno, D. Kalita, V. Georgiev und 11 andere Autor(en). DATE, Seite 937-942. IEEE, (2018)Secure, Performance-Oriented Data Management for nanoCMOS Electronics.R. Sinnott, C. Bayliss, C. Davenhall, B. Harbulot, M. Jones, C. Millar, G. Roy, S. Roy, G. Stewart, J. Watt und 1 andere Autor(en). eScience, Seite 87-94. IEEE Computer Society, (2008)Integrating Security Solutions to Support nanoCMOS Electronics Research.R. Sinnott, C. Bayliss, T. Doherty, D. Martin, C. Millar, G. Stewart, J. Watt, A. Asenov, G. Roy, S. Roy und 3 andere Autor(en). ISPA, Seite 71-79. IEEE Computer Society, (2008)Capturing intrinsic parameter fluctuations using the PSP compact model.B. Cheng, D. Dideban, N. Moezi, C. Millar, G. Roy, X. Wang, S. Roy, und A. Asenov. DATE, Seite 650-653. IEEE, (2010)Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis.M. Merrett, P. Asenov, Y. Wang, M. Zwolinski, D. Reid, C. Millar, S. Roy, Z. Liu, S. Furber, und A. Asenov. DATE, Seite 1537-1540. IEEE, (2011)Modeling and simulation of transistor and circuit variability and reliability.A. Asenov, B. Cheng, D. Dideban, U. Kovac, N. Moezi, C. Millar, G. Roy, A. Brown, und S. Roy. CICC, Seite 1-8. IEEE, (2010)

PUMA

Disambiguation of "Millar, Campbell"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguierung

PUMA

Disambiguation of "Millar, Campbell"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguierung

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.