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A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing.

, , , , , , , , , and . J. Solid-State Circuits, 51 (11): 2786-2798 (2016)

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Highly Reliable Two-Step Charge-Pump Read Scheme for 1.5 F2/Bit Nonlinear Sub-Teraohm 0TNR Vertical ReRAM., , , , , , and . IEEE Trans. on Circuits and Systems, 65-II (9): 1234-1238 (2018)Resistance switching for RRAM applications., , , , , , , , , and 4 other author(s). SCIENCE CHINA Information Sciences, 54 (5): 1073-1086 (2011)17.5 A 3T1R nonvolatile TCAM using MLC ReRAM with Sub-1ns search time., , , , , , , , , and 1 other author(s). ISSCC, page 1-3. IEEE, (2015)A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing., , , , , , , , , and . J. Solid-State Circuits, 51 (11): 2786-2798 (2016)NV-BNN: An Accurate Deep Convolutional Neural Network Based on Binary STT-MRAM for Adaptive AI Edge., , , , , , , , , and 1 other author(s). DAC, page 30. ACM, (2019)Low power design of phase-change memory based on a comprehensive model., , , , , , , , , and 2 other author(s). IET Computers & Digital Techniques, 4 (4): 285-292 (2010)Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications., , , , , , , , , and 4 other author(s). IEEE Trans. on Circuits and Systems, 62-II (1): 80-84 (2015)A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips., , , , , , , and . APCCAS, page 695-698. IEEE, (2014)Memory access algorithm for low energy CPU/GPU heterogeneous systems with hybrid DRAM/NVM memory architecture., , , , , , and . APCCAS, page 461-464. IEEE, (2016)Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme., , , , , , , , , and . J. Solid-State Circuits, 49 (4): 908-916 (2014)