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Small-Signal and Temperature Noise Model for MOSFETs

, , , and . IEEE Transactions on Microwave Theory and Techniques, 50 (8): 1927-1934 (2002)
DOI: 10.1109/TMTT.2002.801339

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Small-Signal and Temperature Noise Model for MOSFETs, , , and . IEEE Transactions on Microwave Theory and Techniques, 50 (8): 1927-1934 (2002)Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz., , , , , and . IEICE Transactions, 93-C (8): 1238-1244 (2010)MOSFET noise model and low noise amplifier design, , , and . Proceedings from the GigaHertz Symposium, page 367--370. Gothenburg, Sweden, (2000)De-Embedding Procedure for RF Equivalent Circuits of MOSFETs, , and . International Semiconductor Device Research Symposium (ISDRS), page 497--500. Charlottesville,Virginia, USA, (1999)Energy Efficient Massive MIMO Array Configurations., , , and . GLOBECOM Workshops, page 1-6. IEEE, (2018)Design and W-CDMA Characterization of a Wideband AlGaN/GaN HEMT Power Amplifier for Future 3G/4G Multiband Base Station Applications, , , , , , , , , and 5 other author(s). German Microwave Conference (GeMIC), page 7a-3. Karlsruhe, Germany, (2006)Determination of small-signal parameters of GaN-based HEMTs, , , , , , , , , and 4 other author(s). IEEE/Cornell Conference on High Performance Devices, page 115--122. Ithaca, NY, USA, (2000)Continuous-Time Bandpass Delta-Sigma Modulator with 8 GHz Sampling Frequency, , , , , , and . European Solid-State Circuits Conference Fringe (ESSCIRC Fringe), Edinburgh, Scotland, UK, (2008)Continuous-Time Bandpass Delta-Sigma Modulator for a Signal Frequency of 2.2 GHz, , , , , , and . German Microwave Conference (GeMIC), page 1--4. Munich, Germany, (2009)Temperature Noise Model for MOSFET Noise Characterization, , and . European Microwave Conference (EuMC), page 1--4. Paris, France, (2000)