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Silicon germanium tin alloys formed by pulsed laser induced epitaxy

S. Stefanov, J. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, D. Buca, B. Holländer, S. Mantl, and S. Chiussi. Applied Physics Letters, 100 (20): 204102 (2012)
DOI: 10.1063/1.4714768

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S. Schumann

S. Seemann

S. Wartzack

Boettinger S

S. Toro

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Laser assisted formation of binary and ternary Ge/Si/Sn alloysS. Stefanov, J. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, and S. Chiussi. Thin Solid Films, 520 (8): 3262-3265 (2012)Silicon germanium tin alloys formed by pulsed laser induced epitaxyS. Stefanov, J. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, D. Buca, B. Holländer, S. Mantl and 1 other author(s). Applied Physics Letters, 100 (20): 204102 (2012)(Invited) UV Excimer Laser Assisted Heteroepitaxy of (Si)GeSn on Si(100)S. Chiussi, S. Stefanov, A. Benedetti, C. Serra, D. Buca, J. Schulze, and P. Gonzalez. ECS Transactions, 64 (6): 115--125 (August 2014)(Si)GeSn nanostructures for optoelectronic device applicationsI. Fischer, F. Oliveira, A. Benedetti, S. Chiussi, and J. Schulze. 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-4. Piscataway, NJ, IEEE, (2016)Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysisF. Oliveira, I. Fischer, A. Benedetti, M. Cerqueira, M. Vasilevskiy, S. Stefanov, S. Chiussi, and J. Schulze. Journal of applied physics, 117 (12): 125706 (2015)Fabrication of GePb-Alloys by Means of Pulsed Laser Induced EpitaxyM. Weiser, D. Schwarz, H. Funk, D. Weißhaupt, C. Serra, J. Schulze, and S. Chiussi. 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-6. IEEE, (2019)Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxyF. Oliveira, I. Fischer, A. Benedetti, P. Zaumseil, M. Cerqueira, M. Vasilevskiy, S. Stefanov, S. Chiussi, and J. Schulze. Applied physics letters, 107 (26): 262102 (2015)Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modelingT. Wendav, I. Fischer, M. Virgilio, G. Capellini, F. Oliveira, M. Cerqueira, A. Benedetti, S. Chiussi, P. Zaumseil, B. Schwartz and 2 other author(s). Physical review. B, Condensed matter and materials physics, 94 (24): 245304 (2016)Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxyJ. Schlipf, J. Frieiro, I. Fischer, C. Serra, J. Schulze, and S. Chiussi. 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 37-42. IEEE, (2017)

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Disambiguation of "Chiussi, S."

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Silicon germanium tin alloys formed by pulsed laser induced epitaxy

Please choose a person to relate this publication to

S. Schumann

S. Seemann

S. Wartzack

Boettinger S

S. Toro

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Chiussi, S."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Silicon germanium tin alloys formed by pulsed laser induced epitaxy

Please choose a person to relate this publication to

S. Schumann

S. Seemann

S. Wartzack

Boettinger S

S. Toro

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
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Silicon germanium tin alloys formed by pulsed laser induced epitaxy