%0 Journal Article %1 stefanov2012silicon %A Stefanov, S. %A Conde, J. C. %A Benedetti, A. %A Serra, C. %A Werner, Jens %A Oehme, Michael %A Schulze, Jörg %A Buca, D. %A Holländer, B. %A Mantl, S. %A Chiussi, S. %D 2012 %I American Institute of Physics %J Applied Physics Letters %K %N 20 %P 204102 %R 10.1063/1.4714768 %T Silicon germanium tin alloys formed by pulsed laser induced epitaxy %V 100 %X Pulsed lased induced epitaxy is used to obtain heteroepitaxial Ge1−xSnx and Si1−x−yGexSny alloys with graded composition on Si(001) substrates. The transition from Ge1−xSnx to Si1−x−yGexSny was achieved by varying the number of laser pulses accordingly with the level of intermixing between Si, Ge, and Sn. Melt duration, predicted by numerical methods, is experimentally confirmed by "in-situ" reflectivity measurements and relates, like the end reflectivity value, to the level of intermixing. The possibility to adjust concentration profiles through laser processing of Sn films on virtual germanium buffer layers for lattice engineering of Ge1−xSnx and Si1−x−yGexSny alloys on silicon substrates is demonstrated.

@article{stefanov2012silicon, abstract = {Pulsed lased induced epitaxy is used to obtain heteroepitaxial Ge1−xSnx and Si1−x−yGexSny alloys with graded composition on Si(001) substrates. The transition from Ge1−xSnx to Si1−x−yGexSny was achieved by varying the number of laser pulses accordingly with the level of intermixing between Si, Ge, and Sn. Melt duration, predicted by numerical methods, is experimentally confirmed by "in-situ" reflectivity measurements and relates, like the end reflectivity value, to the level of intermixing. The possibility to adjust concentration profiles through laser processing of Sn films on virtual germanium buffer layers for lattice engineering of Ge1−xSnx and Si1−x−yGexSny alloys on silicon substrates is demonstrated.}, added-at = {2023-08-31T14:58:35.000+0200}, author = {Stefanov, S. and Conde, J. C. and Benedetti, A. and Serra, C. and Werner, Jens and Oehme, Michael and Schulze, Jörg and Buca, D. and Holländer, B. and Mantl, S. and Chiussi, S.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2c77879237085706336b49b7f39768d52/puma-wartung}, doi = {10.1063/1.4714768}, interhash = {1728777e6995b90a860903a6640941fa}, intrahash = {c77879237085706336b49b7f39768d52}, issn = {0003-6951}, journal = {Applied Physics Letters}, keywords = {}, language = {eng}, number = 20, pages = 204102, privnote = {doi: 10.1063/1.4714768}, publisher = {American Institute of Physics}, timestamp = {2023-08-31T12:58:35.000+0200}, title = {Silicon germanium tin alloys formed by pulsed laser induced epitaxy}, volume = 100, year = 2012 }