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NBTI and irradiation related degradation mechanisms in power VDMOS transistors., , , , , , , , and . Microelectronics Reliability, (2018)Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress., , , , , , , and . Microelectronics Reliability, 50 (9-11): 1278-1282 (2010)Effects of electrical stressing in power VDMOSFETs., , , , , , and . Microelectronics Reliability, 45 (1): 115-122 (2005)NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions., , , , , , , and . Microelectronics Reliability, 51 (9-11): 1540-1543 (2011)Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs., , , , , , and . Microelectronics Reliability, 42 (9-11): 1465-1468 (2002)NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs., , , , , and . Microelectronics Reliability, 46 (9-11): 1828-1833 (2006)Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs., , , , , and . IET Circuits, Devices & Systems, 2 (2): 213-221 (2008)An Electromechanical Approach to a Printed Circuit Board Design Course., , , and . IEEE Trans. Education, 56 (4): 470-477 (2013)Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs., , , , , and . Microelectronics Reliability, 49 (9-11): 1003-1007 (2009)Negative bias temperature instability mechanisms in p-channel power VDMOSFETs., , , , , and . Microelectronics Reliability, 45 (9-11): 1343-1348 (2005)