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Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications

D. Koch, J. Weimer, M. Weiser, J. Hueckelheim, and I. Kallfass. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), page 1755-1760. (June 2021)
DOI: 10.1109/APEC42165.2021.9487194

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Tim Janz University of Stuttgart

PD Dr. phil. Frank Janle University of Stuttgart

Benedikt Janny

Isabel Janowsky University of Stuttgart

Hon. -Prof. Dr. Martin Jansen University of Stuttgart

Other publications of authors with the same name

Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid ApplicationsD. Koch, J. Weimer, M. Weiser, J. Hueckelheim, and I. Kallfass. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), page 1755-1760. (June 2021)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical ParameterK. Sharma, K. Muñoz Barón, J. Ruthardt, J. Hueckelheim, D. Koch, F. Muenzenmayer, and I. Kallfass. CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, page 1-6. Berlin, Germany, (March 2020)