%0 Conference Paper %1 9487194 %A Koch, Dominik %A Weimer, Julian %A Weiser, Mathias %A Hueckelheim, Jan %A Kallfass, Ingmar %B 2021 IEEE Applied Power Electronics Conference and Exposition (APEC) %D 2021 %K myown %P 1755-1760 %R 10.1109/APEC42165.2021.9487194 %T Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications %U https://ieeexplore.ieee.org/document/9487194/ %X In this work experimental and simulative proof of a concept for paralleling low voltage and high current Gallium Nitride (GaN) transistors each with a distinct gate booster is presented. For both high-side (HS) and low-side (LS), two 100V 5mΩ normally-off GaN-HEMTs are operated with a driver, which offers separate paths for turn-on and turn-off. In combination with the Kelvin source a minimal gate-loop inductance and stable switching operation is achieved. The HS and LS signals are provided by an isolated half-bridge driver with ultra-low jitter and identical PCB path lengths to ensure equal propagation delay. The half-bridge with paralleled GaN-HEMTs, which is approved by full-wave S-parameter extraction in combination with a comprehensive thermal simulation and a transient simulation based on a physical GaN model, is operated in a 300kHz48V-to-24V buck converter operation up to 54A output current with an overall efficiency of above 95%. The output power of the converter is mainly limited by the thermal performance of the packaging and the PCB and the single gate-contact of the transistors, which is reducing the degrees of freedoms in the layout and introducing significant common source and parasitic inductances.

@inproceedings{9487194, abstract = {In this work experimental and simulative proof of a concept for paralleling low voltage and high current Gallium Nitride (GaN) transistors each with a distinct gate booster is presented. For both high-side (HS) and low-side (LS), two 100V 5mΩ normally-off GaN-HEMTs are operated with a driver, which offers separate paths for turn-on and turn-off. In combination with the Kelvin source a minimal gate-loop inductance and stable switching operation is achieved. The HS and LS signals are provided by an isolated half-bridge driver with ultra-low jitter and identical PCB path lengths to ensure equal propagation delay. The half-bridge with paralleled GaN-HEMTs, which is approved by full-wave S-parameter extraction in combination with a comprehensive thermal simulation and a transient simulation based on a physical GaN model, is operated in a 300kHz48V-to-24V buck converter operation up to 54A output current with an overall efficiency of above 95%. The output power of the converter is mainly limited by the thermal performance of the packaging and the PCB and the single gate-contact of the transistors, which is reducing the degrees of freedoms in the layout and introducing significant common source and parasitic inductances.}, added-at = {2021-07-27T11:12:32.000+0200}, author = {Koch, Dominik and Weimer, Julian and Weiser, Mathias and Hueckelheim, Jan and Kallfass, Ingmar}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f2b388d83aa6426524dfd748f9c74f9c/dominikkoch}, booktitle = {2021 IEEE Applied Power Electronics Conference and Exposition (APEC)}, doi = {10.1109/APEC42165.2021.9487194}, interhash = {0cbb6946966cd330ca593f9996130cc5}, intrahash = {f2b388d83aa6426524dfd748f9c74f9c}, issn = {2470-6647}, keywords = {myown}, month = {June}, pages = {1755-1760}, timestamp = {2021-07-27T09:12:32.000+0200}, title = {Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications}, url = {https://ieeexplore.ieee.org/document/9487194/}, year = 2021 }