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%0 Journal Article
%1 journals/mr/ShickovaKVAHMGK07
%A Shickova, A.
%A Kaczer, Ben
%A Veloso, Anabela
%A Aoulaiche, Marc
%A Houssa, M.
%A Maes, H. E.
%A Groeseneken, Guido
%A Kittl, J. A.
%D 2007
%J Microelectronics Reliability
%K dblp
%N 4-5
%P 505-507
%T NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.
%U http://dblp.uni-trier.de/db/journals/mr/mr47.html#ShickovaKVAHMGK07
%V 47
@article{journals/mr/ShickovaKVAHMGK07,
added-at = {2012-11-15T00:00:00.000+0100},
author = {Shickova, A. and Kaczer, Ben and Veloso, Anabela and Aoulaiche, Marc and Houssa, M. and Maes, H. E. and Groeseneken, Guido and Kittl, J. A.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/20fd43a9f55b42ebba5dae1dbe5c6f82f/dblp},
ee = {http://dx.doi.org/10.1016/j.microrel.2007.01.046},
interhash = {fd7f6d6344751f9ee1ed7e461ebda6c6},
intrahash = {0fd43a9f55b42ebba5dae1dbe5c6f82f},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = {4-5},
pages = {505-507},
timestamp = {2016-02-02T02:00:53.000+0100},
title = {NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr47.html#ShickovaKVAHMGK07},
volume = 47,
year = 2007
}
