%0 Journal Article %1 Steuer_2023 %A Steuer, O %A Schwarz, D %A Oehme, M %A Schulze, J %A Mączko, H %A Kudrawiec, R %A Fischer, I A %A Heller, R %A Hübner, R %A Khan, M M %A Georgiev, Y M %A Zhou, S %A Helm, M %A Prucnal, S %D 2022 %I IOP Publishing %J Journal of Physics: Condensed Matter %K iht journal %N 5 %P 055302 %R 10.1088/1361-648X/aca3ea %T Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting %U https://dx.doi.org/10.1088/1361-648X/aca3ea %V 35 %X The pseudomorphic growth of Ge1−x Sn x on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge1−x Sn x alloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge1−x Sn x alloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm−2, the Ge0.89Sn0.11 layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11 layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.

@article{Steuer_2023, abstract = {The pseudomorphic growth of Ge1−x Sn x on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge1−x Sn x alloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge1−x Sn x alloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm−2, the Ge0.89Sn0.11 layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11 layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.}, added-at = {2023-01-12T10:55:14.000+0100}, author = {Steuer, O and Schwarz, D and Oehme, M and Schulze, J and Mączko, H and Kudrawiec, R and Fischer, I A and Heller, R and Hübner, R and Khan, M M and Georgiev, Y M and Zhou, S and Helm, M and Prucnal, S}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28cb770b8facdfde8a41e6f4ffd2e517e/ihtpublikation}, description = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting - IOPscience}, doi = {10.1088/1361-648X/aca3ea}, interhash = {c9a94cc4c0381ffaf327994eb3a4532b}, intrahash = {8cb770b8facdfde8a41e6f4ffd2e517e}, journal = {Journal of Physics: Condensed Matter}, keywords = {iht journal}, month = dec, number = 5, pages = 055302, publisher = {IOP Publishing}, timestamp = {2023-01-12T09:55:14.000+0100}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, url = {https://dx.doi.org/10.1088/1361-648X/aca3ea}, volume = 35, year = 2022 }