%0 Conference Paper %1 berkmann2018optical %A Berkmann, Fritz %A Augel, Lion %A Schilling, M. B. %A Berrier, A. %A Schwarz, D. %A Weißhaupt, David %A Oehme, Michael %A Schulze, Jörg %A Fischer, Inga A. %B 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) %D 2018 %I IEEE %K %P 0032-0035 %R 10.23919/MIPRO.2018.8400006 %T Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates %X Plasmonic excitations in metal nanostructures can be used to control and manipulate optical energy in the visible and infrared spectrum and have been used to enable biosensing, to enhance absorption and quantum yields for photovoltaics and to enhance the energy efficiency of light-emitting devices. For light at mid-infrared (MIR) wavelengths, metals become less suitable for plasmonic applications as a result of the high Drude losses. At those wavelengths, highly doped semiconductors are potential alternatives. The doped group IV alloy GexSnyhas been shown to be particularly interesting. We present results on the fabrication and optical characterization of rod antennas fabricated from highly n-type doped Ge0.95Sn0.05(n-GexSny) on Si(001) substrates. Extinction spectra were obtained via Fourier Transform Infrared (FTIR) Spectroscopy. To verify the measurement results the behavior of the n-Ge0.95Sn0.05rod antennas was simulated. The results show that the n-Ge0.95Sn0.05rod antennas absorb MIR radiation through plasmonic excitation. Two different peaks could be observed in the extinction spectra of the n-Ge0.95Sn0.05rod antennas and attributed to two locally separated plasmonic modes. One mode forms on the n-Ge0.95Sn0.05/Si interface of the n-Ge0.95Sn0.05rod antennas, the other one forms at the n-Ge0.95Sn0.05/air interface. We discuss possible applications of this type of n-Ge0.95Sn0.05rod antennas for MIR sensing. %@ 978-953-233-095-3 and 978-953-233-097-7 and 978-1-5386-3777-7

@inproceedings{berkmann2018optical, abstract = {Plasmonic excitations in metal nanostructures can be used to control and manipulate optical energy in the visible and infrared spectrum and have been used to enable biosensing, to enhance absorption and quantum yields for photovoltaics and to enhance the energy efficiency of light-emitting devices. For light at mid-infrared (MIR) wavelengths, metals become less suitable for plasmonic applications as a result of the high Drude losses. At those wavelengths, highly doped semiconductors are potential alternatives. The doped group IV alloy GexSnyhas been shown to be particularly interesting. We present results on the fabrication and optical characterization of rod antennas fabricated from highly n-type doped Ge0.95Sn0.05(n-GexSny) on Si(001) substrates. Extinction spectra were obtained via Fourier Transform Infrared (FTIR) Spectroscopy. To verify the measurement results the behavior of the n-Ge0.95Sn0.05rod antennas was simulated. The results show that the n-Ge0.95Sn0.05rod antennas absorb MIR radiation through plasmonic excitation. Two different peaks could be observed in the extinction spectra of the n-Ge0.95Sn0.05rod antennas and attributed to two locally separated plasmonic modes. One mode forms on the n-Ge0.95Sn0.05/Si interface of the n-Ge0.95Sn0.05rod antennas, the other one forms at the n-Ge0.95Sn0.05/air interface. We discuss possible applications of this type of n-Ge0.95Sn0.05rod antennas for MIR sensing.}, added-at = {2023-08-31T15:12:18.000+0200}, author = {Berkmann, Fritz and Augel, Lion and Schilling, M. B. and Berrier, A. and Schwarz, D. and Weißhaupt, David and Oehme, Michael and Schulze, Jörg and Fischer, Inga A.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/207ecfe42759dd03dec073929542402c1/puma-wartung}, booktitle = {2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)}, doi = {10.23919/MIPRO.2018.8400006}, eventdate = {2018-05-21/2018-05-25}, eventtitle = {41st International Convention on Information and Communication Technology, Electronics and Microelectronics 2018 (MIPRO)}, interhash = {ba3bb3bb95b80a126d40419cffe0d10c}, intrahash = {07ecfe42759dd03dec073929542402c1}, isbn = {{978-953-233-095-3} and {978-953-233-097-7} and {978-1-5386-3777-7}}, keywords = {}, language = {eng}, pages = {0032-0035}, publisher = {IEEE}, timestamp = {2023-08-31T13:12:18.000+0200}, title = {Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates}, venue = {Opatija, Croatia}, year = 2018 }