%0 Journal Article %1 oehme2011roomtemperature %A Oehme, Michael %A Werner, J. %A Gollhofer, M. %A Schmid, M. %A Kaschel, M. %A Kasper, Erich %A Schulze, Jörg %D 2011 %I IEEE %J IEEE Photonics Technology Letters %K %N 23 %P 1751-1753 %R 10.1109/LPT.2011.2169052 %T Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si %V 23 %X In this letter, a GeSn light-emitting pin diode integrated on Si via a Ge buffer is demonstrated and it is compared with a light-emitting pin diode made from pure, unstrained Ge on Si. The diode layer structures are grown with a special low-temperature molecular beam epitaxy process. The pseudomorphic GeSn layers (1.1% Sn content) on the Ge buffer are compressively strained. Both light-emitting pin diodes clearly show direct bandgap electroluminescence emission at room temperature. The electroluminescence peak of the GeSn light-emitting pin diode is shifted by 20 meV into the infrared region compared to the electroluminescence peak of the unstrained Ge light-emitting pin diode. The shift is due to the lower bandgap of GeSn and the influence of strain.

@article{oehme2011roomtemperature, abstract = {In this letter, a GeSn light-emitting pin diode integrated on Si via a Ge buffer is demonstrated and it is compared with a light-emitting pin diode made from pure, unstrained Ge on Si. The diode layer structures are grown with a special low-temperature molecular beam epitaxy process. The pseudomorphic GeSn layers (1.1% Sn content) on the Ge buffer are compressively strained. Both light-emitting pin diodes clearly show direct bandgap electroluminescence emission at room temperature. The electroluminescence peak of the GeSn light-emitting pin diode is shifted by 20 meV into the infrared region compared to the electroluminescence peak of the unstrained Ge light-emitting pin diode. The shift is due to the lower bandgap of GeSn and the influence of strain.}, added-at = {2023-08-31T15:00:55.000+0200}, author = {Oehme, Michael and Werner, J. and Gollhofer, M. and Schmid, M. and Kaschel, M. and Kasper, Erich and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/24e36cbcb11cd5715baad05384a5ebc0c/puma-wartung}, doi = {10.1109/LPT.2011.2169052}, interhash = {b8d36a570376b6bc04848b2483b8dff4}, intrahash = {4e36cbcb11cd5715baad05384a5ebc0c}, issn = {{1041-1135} and {1941-0174}}, journal = {IEEE Photonics Technology Letters}, keywords = {}, language = {eng}, number = 23, pages = {1751-1753}, publisher = {IEEE}, timestamp = {2023-08-31T13:00:55.000+0200}, title = {Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si}, volume = 23, year = 2011 }