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Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

, , , , , , and . IEEE Photonics Technology Letters, 23 (23): 1751-1753 (2011)
DOI: 10.1109/LPT.2011.2169052

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Monolithic SiGe Photodiode Technology, , , , and . Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), page 78--83. Stuttgart, Germany, (2002)High frequency behaviour of Ge pin junctions, , , , and . International Workshop on New Group IV Semiconductor Nanoelectronics, Digest of papers, page 1--3. Sendai, Japan, (2010)Fast Ge p-i-n Photodetectors on Si, , , , and . International SiGe Technology and Device Meeting, page 1--2. Princeton, NJ, USA, (2006)Special Etch Technologies for Ge/Si Devices, , , , , , and . (2003)GeSn p-i-n detectors integrated on Si with up to 4% Sn, , , , , , and . Applied Physics Letters, 101 (14): 141110 (2012)Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures, , , , , , , and . Integrated Photonics : Materials, Devices, and Applications II, 8767, page 87670C. SPIE, (2013)Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe, , , and . Sixth International Conference on Silicon Epitaxy and Heterostructures, 518, 6, Supplement 1, page S234-S236. Amsterdam, Elsevier, (2010)Two-dimensional hole gases in SiGeSn alloys, , , , , , and . Semiconductor science and technology, 37 (5): 055009 (2022)Photocurrent Analysis of a Fast Ge p-i-n Detector on Si, , , , and . Applied Physics Letters, 91 (5): 051108 (2007)Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors, , , , , and . Integrated Photonics : Materials, Devices, and Applications II, 8767, page 87670D. SPIE, (2013)