The combination of the ternary alloy Si<inf>x</inf>Ge<inf>l-x-y</inf>Sn<inf>y</inf> with Gel<inf>-y</inf>Sn<inf>y</inf> is very promising for electrooptical applications in the near infrared regime up to 2.5 µm wavelength. With the tunable bandgap at a non-varying lattice constant SixGe<inf>l-x-y</inf> Sny is predestined for the lattice matched growth on a Ge virtual substrate and the integration of pseudomorphic Gel-ySny layers with high Sn content (> 10 %). The main challenge of the growth of such alloys is to achieve a low density of defects. However, in the last few years there was a major progress in growing highly doped SixGe<inf>l-x-y</inf>Sny layers with good crystal quality. In this work we investigate the electrical characteristics of a SixGe<inf>l-x-y</inf>Sny/Ge/Ge<inf>l-y</inf>Sny -pin-heterodiode in a temperature range from 300 K to 8 K. This temperature depended measurement provides the opportunity for a more precise characterization of such diodes. A linear relation between reciprocal temperature and the ideality factor is found. With the extrapolation of this relation up to room temperature the ideality factor of the diode is calculated (n = 1.22). From the temperature dependent reverse current the activation energy is determined (<tex>$E_A= 0.178$</tex> eV). We discuss the possibility to utilize such diodes for near infrared electrooptical applications.
Description
Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures | IEEE Conference Publication | IEEE Xplore
%0 Conference Paper
%1 9597082
%A Seidel, L.
%A Schwarz, D.
%A Oehme, M.
%A Causevic, A.
%A Funk, H. S.
%A Weißhaupt, D.
%A Berkmann, F.
%A Schulze, J.
%B 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
%D 2021
%K iht j.schulze.iht journal professional_meetings
%P 55-59
%R 10.23919/MIPRO52101.2021.9597082
%T Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures
%X The combination of the ternary alloy Si<inf>x</inf>Ge<inf>l-x-y</inf>Sn<inf>y</inf> with Gel<inf>-y</inf>Sn<inf>y</inf> is very promising for electrooptical applications in the near infrared regime up to 2.5 µm wavelength. With the tunable bandgap at a non-varying lattice constant SixGe<inf>l-x-y</inf> Sny is predestined for the lattice matched growth on a Ge virtual substrate and the integration of pseudomorphic Gel-ySny layers with high Sn content (> 10 %). The main challenge of the growth of such alloys is to achieve a low density of defects. However, in the last few years there was a major progress in growing highly doped SixGe<inf>l-x-y</inf>Sny layers with good crystal quality. In this work we investigate the electrical characteristics of a SixGe<inf>l-x-y</inf>Sny/Ge/Ge<inf>l-y</inf>Sny -pin-heterodiode in a temperature range from 300 K to 8 K. This temperature depended measurement provides the opportunity for a more precise characterization of such diodes. A linear relation between reciprocal temperature and the ideality factor is found. With the extrapolation of this relation up to room temperature the ideality factor of the diode is calculated (n = 1.22). From the temperature dependent reverse current the activation energy is determined (<tex>$E_A= 0.178$</tex> eV). We discuss the possibility to utilize such diodes for near infrared electrooptical applications.
@inproceedings{9597082,
abstract = {The combination of the ternary alloy Si<inf>x</inf>Ge<inf>l-x-y</inf>Sn<inf>y</inf> with Gel<inf>-y</inf>Sn<inf>y</inf> is very promising for electrooptical applications in the near infrared regime up to 2.5 µm wavelength. With the tunable bandgap at a non-varying lattice constant SixGe<inf>l-x-y</inf> Sny is predestined for the lattice matched growth on a Ge virtual substrate and the integration of pseudomorphic Gel-ySny layers with high Sn content (> 10 %). The main challenge of the growth of such alloys is to achieve a low density of defects. However, in the last few years there was a major progress in growing highly doped SixGe<inf>l-x-y</inf>Sny layers with good crystal quality. In this work we investigate the electrical characteristics of a SixGe<inf>l-x-y</inf>Sny/Ge/Ge<inf>l-y</inf>Sny -pin-heterodiode in a temperature range from 300 K to 8 K. This temperature depended measurement provides the opportunity for a more precise characterization of such diodes. A linear relation between reciprocal temperature and the ideality factor is found. With the extrapolation of this relation up to room temperature the ideality factor of the diode is calculated (n = 1.22). From the temperature dependent reverse current the activation energy is determined (<tex>$E_{A}= 0.178$</tex> eV). We discuss the possibility to utilize such diodes for near infrared electrooptical applications.},
added-at = {2021-11-23T12:21:13.000+0100},
author = {Seidel, L. and Schwarz, D. and Oehme, M. and Causevic, A. and Funk, H. S. and Weißhaupt, D. and Berkmann, F. and Schulze, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2cdba729b1c64f886c40bb0ef49461d8c/ihtpublikation},
booktitle = {2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)},
description = {Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures | IEEE Conference Publication | IEEE Xplore},
doi = {10.23919/MIPRO52101.2021.9597082},
interhash = {e416c7806056e06c4ef604179570d578},
intrahash = {cdba729b1c64f886c40bb0ef49461d8c},
issn = {2623-8764},
keywords = {iht j.schulze.iht journal professional_meetings},
month = {Sep.},
pages = {55-59},
timestamp = {2021-11-23T11:21:13.000+0100},
title = {Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures},
year = 2021
}
