In this paper, we present the development of submillimeter-wave monolithic
integrated circuits (S-MMICs) and modules for use in next-generation
sensors and high-data-rate wireless communication systems, operating
in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier
MMIC and a 440-GHz class-B frequency doubler circuit have been successfully
realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron
mobility transistor (mHEMT) technology in combination with grounded
coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier
MMIC was fabricated using a more advanced 20-nm mHEMT technology.
To package the submillimeter-wave circuits, a set of waveguide-to-microstrip
transitions has been fabricated on both 50- \#x03BC;m-thick quartz
and GaAs substrates, covering the frequency range between 220 and
500 GHz. The E-plane probes were integrated in a four-stage 20-nm
cascode amplifier circuit to realize a full H -band (220 to 325 GHz)
S-MMIC amplifier module with monolithically integrated waveguide
transitions.
%0 Journal Article
%1 Tessmann_JSSC2011
%A Tessmann, A.
%A Leuther, A.
%A Hurm, V.
%A Kallfass, I.
%A Massler, H.
%A Kuri, M.
%A Riessle, M.
%A Zink, M.
%A Loesch, R.
%A Seelmann-Eggebert, M.
%A Schlechtweg, M.
%A Ambacher, O.
%D 2011
%J Solid-State Circuits, IEEE Journal of
%K 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless
%N 10
%P 2193--2202
%R 10.1109/JSSC.2011.2163212
%T Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz
%V 46
%X In this paper, we present the development of submillimeter-wave monolithic
integrated circuits (S-MMICs) and modules for use in next-generation
sensors and high-data-rate wireless communication systems, operating
in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier
MMIC and a 440-GHz class-B frequency doubler circuit have been successfully
realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron
mobility transistor (mHEMT) technology in combination with grounded
coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier
MMIC was fabricated using a more advanced 20-nm mHEMT technology.
To package the submillimeter-wave circuits, a set of waveguide-to-microstrip
transitions has been fabricated on both 50- \#x03BC;m-thick quartz
and GaAs substrates, covering the frequency range between 220 and
500 GHz. The E-plane probes were integrated in a four-stage 20-nm
cascode amplifier circuit to realize a full H -band (220 to 325 GHz)
S-MMIC amplifier module with monolithically integrated waveguide
transitions.
@article{Tessmann_JSSC2011,
abstract = {In this paper, we present the development of submillimeter-wave monolithic
integrated circuits (S-MMICs) and modules for use in next-generation
sensors and high-data-rate wireless communication systems, operating
in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier
MMIC and a 440-GHz class-B frequency doubler circuit have been successfully
realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron
mobility transistor (mHEMT) technology in combination with grounded
coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier
MMIC was fabricated using a more advanced 20-nm mHEMT technology.
To package the submillimeter-wave circuits, a set of waveguide-to-microstrip
transitions has been fabricated on both 50- {\#}x03BC;m-thick quartz
and GaAs substrates, covering the frequency range between 220 and
500 GHz. The E-plane probes were integrated in a four-stage 20-nm
cascode amplifier circuit to realize a full H -band (220 to 325 GHz)
S-MMIC amplifier module with monolithically integrated waveguide
transitions.},
added-at = {2020-09-07T14:26:58.000+0200},
author = {Tessmann, A. and Leuther, A. and Hurm, V. and Kallfass, I. and Massler, H. and Kuri, M. and Riessle, M. and Zink, M. and Loesch, R. and Seelmann-Eggebert, M. and Schlechtweg, M. and Ambacher, O.},
bdsk-url-1 = {https://doi.org/10.1109/JSSC.2011.2163212},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2cd0d363b2b1573f7f33014ada6def625/ingmarkallfass},
doi = {10.1109/JSSC.2011.2163212},
interhash = {de6c65e1d3e9465909d1a2b443d43fc0},
intrahash = {cd0d363b2b1573f7f33014ada6def625},
issn = {0018-9200},
journal = {Solid-State Circuits, IEEE Journal of},
keywords = {20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless},
number = 10,
pages = {2193--2202},
timestamp = {2025-05-26T10:46:15.000+0200},
title = {{Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz}},
volume = 46,
year = 2011
}
