%0 Journal Article %1 Tessmann_JSSC2011 %A Tessmann, A. %A Leuther, A. %A Hurm, V. %A Kallfass, I. %A Massler, H. %A Kuri, M. %A Riessle, M. %A Zink, M. %A Loesch, R. %A Seelmann-Eggebert, M. %A Schlechtweg, M. %A Ambacher, O. %D 2011 %J Solid-State Circuits, IEEE Journal of %K 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless %N 10 %P 2193--2202 %R 10.1109/JSSC.2011.2163212 %T Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz %V 46 %X In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC and a 440-GHz class-B frequency doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50- \#x03BC;m-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode amplifier circuit to realize a full H -band (220 to 325 GHz) S-MMIC amplifier module with monolithically integrated waveguide transitions.

@article{Tessmann_JSSC2011, abstract = {In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC and a 440-GHz class-B frequency doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50- {\#}x03BC;m-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode amplifier circuit to realize a full H -band (220 to 325 GHz) S-MMIC amplifier module with monolithically integrated waveguide transitions.}, added-at = {2020-09-07T14:26:58.000+0200}, author = {Tessmann, A. and Leuther, A. and Hurm, V. and Kallfass, I. and Massler, H. and Kuri, M. and Riessle, M. and Zink, M. and Loesch, R. and Seelmann-Eggebert, M. and Schlechtweg, M. and Ambacher, O.}, bdsk-url-1 = {https://doi.org/10.1109/JSSC.2011.2163212}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2cd0d363b2b1573f7f33014ada6def625/ingmarkallfass}, doi = {10.1109/JSSC.2011.2163212}, interhash = {de6c65e1d3e9465909d1a2b443d43fc0}, intrahash = {cd0d363b2b1573f7f33014ada6def625}, issn = {0018-9200}, journal = {Solid-State Circuits, IEEE Journal of}, keywords = {20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless}, number = 10, pages = {2193--2202}, timestamp = {2025-05-26T10:46:15.000+0200}, title = {{Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz}}, volume = 46, year = 2011 }