The pseudomorphic growth of Ge1−x Sn x on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge1−x Sn x alloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge1−x Sn x alloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm−2, the Ge0.89Sn0.11 layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11 layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.
Description
Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting - IOPscience
%0 Journal Article
%1 Steuer_2023
%A Steuer, O
%A Schwarz, D
%A Oehme, M
%A Schulze, J
%A Mączko, H
%A Kudrawiec, R
%A Fischer, I A
%A Heller, R
%A Hübner, R
%A Khan, M M
%A Georgiev, Y M
%A Zhou, S
%A Helm, M
%A Prucnal, S
%D 2022
%I IOP Publishing
%J Journal of Physics: Condensed Matter
%K iht journal
%N 5
%P 055302
%R 10.1088/1361-648X/aca3ea
%T Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
%U https://dx.doi.org/10.1088/1361-648X/aca3ea
%V 35
%X The pseudomorphic growth of Ge1−x Sn x on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge1−x Sn x alloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge1−x Sn x alloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm−2, the Ge0.89Sn0.11 layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11 layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.
@article{Steuer_2023,
abstract = {The pseudomorphic growth of Ge1−x Sn x on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge1−x Sn x alloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge1−x Sn x alloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm−2, the Ge0.89Sn0.11 layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11 layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.},
added-at = {2023-01-12T10:55:14.000+0100},
author = {Steuer, O and Schwarz, D and Oehme, M and Schulze, J and Mączko, H and Kudrawiec, R and Fischer, I A and Heller, R and Hübner, R and Khan, M M and Georgiev, Y M and Zhou, S and Helm, M and Prucnal, S},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28cb770b8facdfde8a41e6f4ffd2e517e/ihtpublikation},
description = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting - IOPscience},
doi = {10.1088/1361-648X/aca3ea},
interhash = {c9a94cc4c0381ffaf327994eb3a4532b},
intrahash = {8cb770b8facdfde8a41e6f4ffd2e517e},
journal = {Journal of Physics: Condensed Matter},
keywords = {iht journal},
month = dec,
number = 5,
pages = 055302,
publisher = {IOP Publishing},
timestamp = {2023-01-12T09:55:14.000+0100},
title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting},
url = {https://dx.doi.org/10.1088/1361-648X/aca3ea},
volume = 35,
year = 2022
}