This paper proposes a new concept of a Near-Infrared (NIR) micro-system camera with a backside illuminated Germanium-on-Silicon (Ge-on-Si) photodetector. The performance of this photodetector is analyzed and compared to frontside illuminated Ge-on-Si photodetectors. An enhanced responsivity of 0.4 A/W at 1310 nm for the backside illuminated diode is achieved, which is equal to commercial solutions. With the help of zero-biasing, the critical dark current density can be reduced by more than a factor of 80 000 compared to standard biasing with -1 V. By using a backside illuminated diode, reflections of the metal layer are eliminated and the pixel fill factor is increased. Additionally, a proof of concept micro-system with a 2 × 2 pixel array of Ge-on-Si backside illuminated photodetectors and a custom readout ASIC is demonstrated. This proves the functionality of the proposed photodetector and readout concept for NIR camera applications.
Description
A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector | IEEE Conference Publication | IEEE Xplore
%0 Conference Paper
%1 8956731
%A Köllner, Ann-Christin
%A Yu, Zili
%A Oehme, Michael
%A Anders, Jens
%A Kaschel, Mathias
%A Schulze, Jörg
%A Burghartz, Joachim N.
%B 2019 IEEE SENSORS
%D 2019
%K iht j.schulze.iht journal professional_meetings
%P 1-4
%R 10.1109/SENSORS43011.2019.8956731
%T A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector
%X This paper proposes a new concept of a Near-Infrared (NIR) micro-system camera with a backside illuminated Germanium-on-Silicon (Ge-on-Si) photodetector. The performance of this photodetector is analyzed and compared to frontside illuminated Ge-on-Si photodetectors. An enhanced responsivity of 0.4 A/W at 1310 nm for the backside illuminated diode is achieved, which is equal to commercial solutions. With the help of zero-biasing, the critical dark current density can be reduced by more than a factor of 80 000 compared to standard biasing with -1 V. By using a backside illuminated diode, reflections of the metal layer are eliminated and the pixel fill factor is increased. Additionally, a proof of concept micro-system with a 2 × 2 pixel array of Ge-on-Si backside illuminated photodetectors and a custom readout ASIC is demonstrated. This proves the functionality of the proposed photodetector and readout concept for NIR camera applications.
@inproceedings{8956731,
abstract = {This paper proposes a new concept of a Near-Infrared (NIR) micro-system camera with a backside illuminated Germanium-on-Silicon (Ge-on-Si) photodetector. The performance of this photodetector is analyzed and compared to frontside illuminated Ge-on-Si photodetectors. An enhanced responsivity of 0.4 A/W at 1310 nm for the backside illuminated diode is achieved, which is equal to commercial solutions. With the help of zero-biasing, the critical dark current density can be reduced by more than a factor of 80 000 compared to standard biasing with -1 V. By using a backside illuminated diode, reflections of the metal layer are eliminated and the pixel fill factor is increased. Additionally, a proof of concept micro-system with a 2 × 2 pixel array of Ge-on-Si backside illuminated photodetectors and a custom readout ASIC is demonstrated. This proves the functionality of the proposed photodetector and readout concept for NIR camera applications.},
added-at = {2021-11-11T12:32:55.000+0100},
author = {Köllner, Ann-Christin and Yu, Zili and Oehme, Michael and Anders, Jens and Kaschel, Mathias and Schulze, Jörg and Burghartz, Joachim N.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/244f72ca96690d690dbc1dfe202c9d178/ihtpublikation},
booktitle = {2019 IEEE SENSORS},
description = {A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector | IEEE Conference Publication | IEEE Xplore},
doi = {10.1109/SENSORS43011.2019.8956731},
interhash = {2935d5216dbce7ce929d2f19e8e1cd01},
intrahash = {44f72ca96690d690dbc1dfe202c9d178},
issn = {2168-9229},
keywords = {iht j.schulze.iht journal professional_meetings},
month = oct,
pages = {1-4},
timestamp = {2021-11-11T12:27:23.000+0100},
title = {A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector},
year = 2019
}