%0 Conference Paper %1 8757211 %A Povolni, P. %A Schwarz, D. %A Clausen, C. J. %A Elogail, Y. %A Funk, H. S. %A Oehme, Michael %A Weißhaupt, David %A Schulze, Jörg %B 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) %D 2019 %K iht j.schulze.iht journal professional_meetings %P 1-6 %R 10.23919/MIPRO.2019.8757211 %T Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well %U https://ieeexplore.ieee.org/document/8757211/ %X The interest in group-IV based optoelectronic devices has increased due to a foreseeable future demand. The main advantage is the relatively simple integration into the modern Silicon-based Complementary Metal-Oxide-Semiconductor technology platform. The ternary alloy Silicon-Germanium-Tin enables achieving a direct bandgap material made from the indirect semiconductors Silicon, Germanium and Tin. By using a virtual Germanium substrate technology these semiconductors can be integrated on a Silicon wafer. In this paper, we discuss the characterization of grown and fabricated pin-diodes made from the ternary alloy Silicon-Germanium-Tin by using Molecular Beam Epitaxy technology on a virtual Germanium substrate formed on Silicon(001) wafers. To achieve higher Tin concentrations to enable direct band transitions, a thin Germanium-Tin layer is inserted into the intrinsic region of the pin-diodes resulting in a quantum well. It is shown that these pin-diodes have electrically good characteristics and in particular a low dark current density, which suggest a high crystal-quality.

@inproceedings{8757211, abstract = {The interest in group-IV based optoelectronic devices has increased due to a foreseeable future demand. The main advantage is the relatively simple integration into the modern Silicon-based Complementary Metal-Oxide-Semiconductor technology platform. The ternary alloy Silicon-Germanium-Tin enables achieving a direct bandgap material made from the indirect semiconductors Silicon, Germanium and Tin. By using a virtual Germanium substrate technology these semiconductors can be integrated on a Silicon wafer. In this paper, we discuss the characterization of grown and fabricated pin-diodes made from the ternary alloy Silicon-Germanium-Tin by using Molecular Beam Epitaxy technology on a virtual Germanium substrate formed on Silicon(001) wafers. To achieve higher Tin concentrations to enable direct band transitions, a thin Germanium-Tin layer is inserted into the intrinsic region of the pin-diodes resulting in a quantum well. It is shown that these pin-diodes have electrically good characteristics and in particular a low dark current density, which suggest a high crystal-quality.}, added-at = {2019-12-23T11:49:49.000+0100}, author = {Povolni, P. and Schwarz, D. and Clausen, C. J. and Elogail, Y. and Funk, H. S. and Oehme, Michael and Weißhaupt, David and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2449d970eada1efccc3df85f243f15429/ihtpublikation}, booktitle = {2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)}, doi = {10.23919/MIPRO.2019.8757211}, interhash = {3a395aa2021cf0c2b0263267939186ae}, intrahash = {449d970eada1efccc3df85f243f15429}, issn = {2623-8764}, keywords = {iht j.schulze.iht journal professional_meetings}, month = may, pages = {1-6}, timestamp = {2019-12-23T10:49:49.000+0100}, title = {Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well}, url = {https://ieeexplore.ieee.org/document/8757211/}, year = 2019 }