%0 Conference Paper %1 deng2022compact %A Deng, Shan %A Benkhelifa, Mahdi %A Thomann, Simon %A Faris, Zubair %A Zhao, Zijian %A Huang, Tzu-Jung %A Xu, Yixin %A Narayanan, Vijaykrishnan %A Ni, Kai %A Amrouch, Hussam %B 2022 International Electron Devices Meeting (IEDM) %D 2022 %I IEEE %K %R 10.1109/IEDM45625.2022.10019400 %T Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications %@ 978-1-6654-8959-1 and 978-1-6654-8960-7

@inproceedings{deng2022compact, added-at = {2023-11-29T14:02:41.000+0100}, affiliation = {Ni, K (Corresponding Author), Rochester Inst Technol, Rochester, NY 14623 USA. Amrouch, H (Corresponding Author), Univ Stuttgart, Stuttgart, Germany. Deng, Shan; Faris, Zubair; Zhao, Zijian; Huang, Tzu-Jung; Ni, Kai, Rochester Inst Technol, Rochester, NY 14623 USA. Benkhelifa, Mahdi; Thomann, Simon; Amrouch, Hussam, Univ Stuttgart, Stuttgart, Germany. Xu, Yixin; Narayanan, Vijaykrishnan, Penn State Univ, University Pk, PA 16802 USA.}, author = {Deng, Shan and Benkhelifa, Mahdi and Thomann, Simon and Faris, Zubair and Zhao, Zijian and Huang, Tzu-Jung and Xu, Yixin and Narayanan, Vijaykrishnan and Ni, Kai and Amrouch, Hussam}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2a12f9168871c6f3ab7a7a80dd2763132/unibiblio}, booktitle = {2022 International Electron Devices Meeting (IEDM)}, doi = {10.1109/IEDM45625.2022.10019400}, eventdate = {2022-12-03/2022-12-07}, eventtitle = {2022 International Electron Devices Meeting (IEDM)}, interhash = {237f63d0879beefc1ccd5e5f6f174870}, intrahash = {a12f9168871c6f3ab7a7a80dd2763132}, isbn = {{978-1-6654-8959-1} and {978-1-6654-8960-7}}, keywords = {}, language = {eng}, orcid-numbers = {Thomann, Simon/0000-0002-7902-9353}, publisher = {IEEE}, research-areas = {Engineering}, timestamp = {2023-11-29T13:02:41.000+0100}, title = {Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications}, unique-id = {WOS:000968800700057}, venue = {San Francisco, USA}, year = 2022 }