Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 − 4 cm 2 ·s − 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment.
%0 Journal Article
%1 lill2017boron
%A Lill, Patrick C.
%A Dahlinger, Morris
%A Köhler, Jürgen R.
%D 2017
%J Materials
%K 2017 access fonds oa open stuttgart uni
%N 2
%P 189
%R 10.3390/ma10020189
%T Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon
%U http://www.mdpi.com/1996-1944/10/2/189
%V 10
%X Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 − 4 cm 2 ·s − 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment.
@article{lill2017boron,
abstract = {Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 − 4 cm 2 ·s − 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment.},
added-at = {2018-04-22T15:10:24.000+0200},
author = {Lill, Patrick C. and Dahlinger, Morris and Köhler, Jürgen R.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/227813b31cfc779255442e6d61fd4e32e/droessler},
doi = {10.3390/ma10020189},
interhash = {a49c949b3fb15fc5ed6008a2f2ee8059},
intrahash = {27813b31cfc779255442e6d61fd4e32e},
issn = {1996-1944},
journal = {Materials},
keywords = {2017 access fonds oa open stuttgart uni},
number = 2,
pages = 189,
timestamp = {2018-04-22T13:10:24.000+0200},
title = {Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon},
url = {http://www.mdpi.com/1996-1944/10/2/189},
volume = 10,
year = 2017
}