The negatively charged silicon vacancy center (\$\$\\\backslashrm\V\\\\_\\\backslashrm\Si\\\^\-\\$\$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us from achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of the \$\$\\\backslashrm\V\\\\_\\\backslashrm\Si\\\^\-\\$\$center at cubic lattice site (V2) in 4H-SiC by an in-depth electronic fine structure modeling including the intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all the previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to three-photon GHZ or cluster states are readily within reach using the existing nanophotonic cavity technology.
%0 Journal Article
%1 Liu2024
%A Liu, Di
%A Kaiser, Florian
%A Bushmakin, Vladislav
%A Hesselmeier, Erik
%A Steidl, Timo
%A Ohshima, Takeshi
%A Son, Nguyen Tien
%A Ul-Hassan, Jawad
%A Soykal, Öney O.
%A Wrachtrup, Jörg
%D 2024
%J npj Quantum Information
%K pi3 wrachtrup
%N 1
%P 72
%R 10.1038/s41534-024-00861-6
%T The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics
%U https://doi.org/10.1038/s41534-024-00861-6
%V 10
%X The negatively charged silicon vacancy center (\$\$\\\backslashrm\V\\\\_\\\backslashrm\Si\\\^\-\\$\$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us from achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of the \$\$\\\backslashrm\V\\\\_\\\backslashrm\Si\\\^\-\\$\$center at cubic lattice site (V2) in 4H-SiC by an in-depth electronic fine structure modeling including the intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all the previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to three-photon GHZ or cluster states are readily within reach using the existing nanophotonic cavity technology.
@article{Liu2024,
abstract = {The negatively charged silicon vacancy center ({\$}{\$}{\{}{\{}{\backslash}rm{\{}V{\}}{\}}{\}}{\_}{\{}{\{}{\backslash}rm{\{}Si{\}}{\}}{\}}^{\{}-{\}}{\$}{\$}) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us from achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of the {\$}{\$}{\{}{\{}{\backslash}rm{\{}V{\}}{\}}{\}}{\_}{\{}{\{}{\backslash}rm{\{}Si{\}}{\}}{\}}^{\{}-{\}}{\$}{\$}center at cubic lattice site (V2) in 4H-SiC by an in-depth electronic fine structure modeling including the intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all the previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to three-photon GHZ or cluster states are readily within reach using the existing nanophotonic cavity technology.},
added-at = {2024-08-15T10:38:03.000+0200},
author = {Liu, Di and Kaiser, Florian and Bushmakin, Vladislav and Hesselmeier, Erik and Steidl, Timo and Ohshima, Takeshi and Son, Nguyen Tien and Ul-Hassan, Jawad and Soykal, {\"O}ney O. and Wrachtrup, J{\"o}rg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/226c049046512dbfb44d73ff1f580c6af/shirschmann},
day = 23,
doi = {10.1038/s41534-024-00861-6},
interhash = {6f1df881a806fb8b407d30a52340b929},
intrahash = {26c049046512dbfb44d73ff1f580c6af},
issn = {2056-6387},
journal = {npj Quantum Information},
keywords = {pi3 wrachtrup},
month = jul,
number = 1,
pages = 72,
timestamp = {2025-02-18T13:55:20.000+0100},
title = {The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics},
url = {https://doi.org/10.1038/s41534-024-00861-6},
volume = 10,
year = 2024
}