%0 Journal Article %1 khosla2017charge %A Khosla, Robin %A Rolseth, Erlend Granbo %A Kumar, Pawan %A Vadakupudhupalayam, Senthil Srinivasan %A Sharma, Satinder K. %A Schulze, Jörg %D 2017 %I IEEE %J IEEE transactions on device and materials reliability %K %N 1 %P 80-89 %R 10.1109/TDMR.2017.2659760 %T Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories %V 17

@article{khosla2017charge, added-at = {2023-08-31T16:17:50.000+0200}, affiliation = {Sharma, SK (Reprint Author), Indian Inst Technol Mandi, Sch Comp & Elect Engn, Mandi 175001, India. Khosla, Robin; Kumar, Pawan; Sharma, Satinder K., Indian Inst Technol Mandi, Sch Comp & Elect Engn, Mandi 175001, India. Rolseth, Erlend Granbo; Vadakupudhupalayam, Senthil Srinivasan; Schulze, Joerg, Univ Stuttgart, Inst Semicond Elect, D-70569 Stuttgart, Germany.}, author = {Khosla, Robin and Rolseth, Erlend Granbo and Kumar, Pawan and Vadakupudhupalayam, Senthil Srinivasan and Sharma, Satinder K. and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2882167fea0b65f3057c8613a79394e66/puma-wartung}, doi = {10.1109/TDMR.2017.2659760}, interhash = {f18520942b0f7eb3572ef56098791ad9}, intrahash = {882167fea0b65f3057c8613a79394e66}, issn = {{1530-4388} and {1558-2574}}, journal = {IEEE transactions on device and materials reliability}, keywords = {}, language = {eng}, number = 1, orcid-numbers = {Khosla, Robin/0000-0002-5879-2106}, pages = {80-89}, publisher = {IEEE}, research-areas = {Engineering; Physics}, timestamp = {2023-08-31T14:17:50.000+0200}, title = {Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories}, unique-id = {ISI:000396397600010}, volume = 17, year = 2017 }