Author of the publication

Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories

, , , , , and . IEEE transactions on device and materials reliability, 17 (1): 80-89 (2017)
DOI: 10.1109/TDMR.2017.2659760

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Approaches for III/V Photonics on Si, , , , , , , , , and . Physics of semiconductors : 30th International Conference on the Physics of Semiconductors . Seoul, Korea, 25 - 30 July 2010, 1399, page 261-262. Melville, New York, AIP, (2010)Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions., and . MIPRO, page 7-11. IEEE, (2018)Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si, , , , , and . Gettering and Defect Engineering in Semiconductor Technology XIV : GADEST 2011, 178, page 25-30. Durnten, Trans Tech Publications, (2011)Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks, , and . IEEE electron device letters, 39 (12): 1832-1835 (2018)The Zener-Emitter : Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source, , , , , , , , , and . 2016 74th Annual Device Research Conference (DRC), page 1-2. IEEE, (2016)Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy, , , , , , , , , and . Microelectronic Engineering, (2014)Structural and vibrational properties of SnxGe1-x : modeling and experiments, , , , and . Journal of applied physics, 124 (3): 035105- (2018)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, , , , , , , , , and . ECS Transactions, 64 (6): 811-818 (2014)Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010), , , , , , and . IEEE Transactions on Electron Devices, 57 (11): 2857-2863 (2010)