%0 Journal Article %1 journals/mr/ZhangBWHLJL16 %A Zhang, Haohao %A Bi, Jinshun %A Wang, Haibin %A Hu, Hongyang %A Li, Jin %A Ji, Lanlong %A Liu, Ming %D 2016 %J Microelectronics Reliability %K dblp %P 104-110 %T Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. %U http://dblp.uni-trier.de/db/journals/mr/mr67.html#ZhangBWHLJL16 %V 67

@article{journals/mr/ZhangBWHLJL16, added-at = {2016-12-14T00:00:00.000+0100}, author = {Zhang, Haohao and Bi, Jinshun and Wang, Haibin and Hu, Hongyang and Li, Jin and Ji, Lanlong and Liu, Ming}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2beb26556c6011018b54d9a8191cb8f22/dblp}, ee = {http://dx.doi.org/10.1016/j.microrel.2016.10.013}, interhash = {d747b58051b3a1c6234ebae15cc8a3cd}, intrahash = {beb26556c6011018b54d9a8191cb8f22}, journal = {Microelectronics Reliability}, keywords = {dblp}, pages = {104-110}, timestamp = {2016-12-15T10:32:29.000+0100}, title = {Study of total ionizing dose induced read bit errors in magneto-resistive random access memory.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr67.html#ZhangBWHLJL16}, volume = 67, year = 2016 }