We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.
%0 Journal Article
%1 Fischer:15
%A Fischer, Inga A.
%A Wendav, Torsten
%A Augel, Lion
%A Jitpakdeebodin, Songchai
%A Oliveira, Filipe
%A Benedetti, Alessandro
%A Stefanov, Stefan
%A Chiussi, Stefano
%A Capellini, Giovanni
%A Busch, Kurt
%A Schulze, Jörg
%D 2015
%I OSA
%J Opt. Express
%K iht j.schulze.iht journal
%N 19
%P 25048--25057
%R 10.1364/OE.23.025048
%T Growth and characterization of SiGeSn quantum well photodiodes
%U http://www.opticsexpress.org/abstract.cfm?URI=oe-23-19-25048
%V 23
%X We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.
@article{Fischer:15,
abstract = {We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.},
added-at = {2018-11-16T14:06:15.000+0100},
author = {Fischer, Inga A. and Wendav, Torsten and Augel, Lion and Jitpakdeebodin, Songchai and Oliveira, Filipe and Benedetti, Alessandro and Stefanov, Stefan and Chiussi, Stefano and Capellini, Giovanni and Busch, Kurt and Schulze, J\"{o}rg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/23785c527f95e7e9c736354de92baaa9e/ihtpublikation},
doi = {10.1364/OE.23.025048},
interhash = {9f8c422bba5cb14168bf20190704cc7b},
intrahash = {3785c527f95e7e9c736354de92baaa9e},
journal = {Opt. Express},
keywords = {iht j.schulze.iht journal},
month = sep,
number = 19,
pages = {25048--25057},
publisher = {OSA},
timestamp = {2018-11-16T13:06:15.000+0100},
title = {Growth and characterization of SiGeSn quantum well photodiodes},
url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-23-19-25048},
volume = 23,
year = 2015
}