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%0 Journal Article
%1 journals/mr/JangKBKKJKS06
%A Jang, J. T.
%A Kim, Y. C.
%A Bong, W. H.
%A Kwon, E. K.
%A Kwon, B. J.
%A Jeon, J. S.
%A Kim, H. G.
%A Son, I. H.
%D 2006
%J Microelectronics Reliability
%K dblp
%N 9-11
%P 1634-1637
%T A new high-voltage tolerant I/O for improving ESD robustness.
%U http://dblp.uni-trier.de/db/journals/mr/mr46.html#JangKBKKJKS06
%V 46
@article{journals/mr/JangKBKKJKS06,
added-at = {2007-03-27T00:00:00.000+0200},
author = {Jang, J. T. and Kim, Y. C. and Bong, W. H. and Kwon, E. K. and Kwon, B. J. and Jeon, J. S. and Kim, H. G. and Son, I. H.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f344ca893721f332573b0a0c83686787/dblp},
ee = {http://dx.doi.org/10.1016/j.microrel.2006.07.033},
interhash = {941282e1e427c3204805055f15c24150},
intrahash = {f344ca893721f332573b0a0c83686787},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = {9-11},
pages = {1634-1637},
timestamp = {2016-02-02T01:59:54.000+0100},
title = {A new high-voltage tolerant I/O for improving ESD robustness.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr46.html#JangKBKKJKS06},
volume = 46,
year = 2006
}
