Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications
%0 Journal Article
%1 elogail2018enhancement
%A Elogail, Yasmine
%A Fischer, Inga A.
%A Wendav, Torsten
%A Schulze, Jörg
%D 2018
%I Institute of Physics Publ.
%J Semiconductor science and technology
%K ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos
%N 11
%P 114001
%R 10.1088/1361-6641/aae001
%T Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications
%V 33
@article{elogail2018enhancement,
added-at = {2020-03-27T18:43:59.000+0100},
affiliation = {Elogail, Y (Reprint Author), Univ Stuttgart, Inst Halbleitertech IHT, Stuttgart, Germany.
Elogail, Yasmine; Fischer, Inga A.; Schulze, Joerg, Univ Stuttgart, Inst Halbleitertech IHT, Stuttgart, Germany.
Wendav, Torsten, Humboldt Univ, Inst Phys, AG Theoret Opt \& Photon, Berlin, Germany.},
author = {Elogail, Yasmine and Fischer, Inga A. and Wendav, Torsten and Schulze, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2dc01b60c829e4e385c4079a1dee1787a/unibiblio},
doi = {10.1088/1361-6641/aae001},
interhash = {8c2812958ecfd8fbf6e2b1265ae29536},
intrahash = {dc01b60c829e4e385c4079a1dee1787a},
issn = {{0268-1242} and {1361-6641}},
journal = {Semiconductor science and technology},
keywords = {ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos},
language = {eng},
number = 11,
orcid-numbers = {Elogail, Yasmine/0000-0002-8793-9373},
pages = 114001,
publisher = {Institute of Physics Publ.},
research-areas = {Engineering; Materials Science; Physics},
timestamp = {2020-03-27T17:43:59.000+0100},
title = {Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications},
unique-id = {ISI:000446823600001},
volume = 33,
year = 2018
}
