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%0 Journal Article
%1 journals/mr/JangLYP13
%A Jang, Hyun Jun
%A Lee, Seung Min
%A Yu, Chong-Gun
%A Park, Jong-Tae
%D 2013
%J Microelectronics Reliability
%K dblp
%N 9-11
%P 1814-1817
%T A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors.
%U http://dblp.uni-trier.de/db/journals/mr/mr53.html#JangLYP13
%V 53
@article{journals/mr/JangLYP13,
added-at = {2014-01-02T00:00:00.000+0100},
author = {Jang, Hyun Jun and Lee, Seung Min and Yu, Chong-Gun and Park, Jong-Tae},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2dafb45f9c4adbf4109f73fc047c471b8/dblp},
ee = {http://dx.doi.org/10.1016/j.microrel.2013.07.005},
interhash = {74622f873f9988d5c97b2760eef8ba03},
intrahash = {dafb45f9c4adbf4109f73fc047c471b8},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = {9-11},
pages = {1814-1817},
timestamp = {2016-02-02T02:01:31.000+0100},
title = {A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr53.html#JangLYP13},
volume = 53,
year = 2013
}
