%0 Journal Article %1 das2018transient %A Das, Bhaskar %A Schulze, Jörg %A Ganguly, Udayan %D 2018 %I IEEE %J IEEE transactions on electron devices %K ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos %N 8 %P 3414-3420 %R 10.1109/TED.2018.2846360 %T Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode %V 65

@article{das2018transient, added-at = {2020-03-27T15:39:33.000+0100}, affiliation = {Das, B (Reprint Author), Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India. Das, Bhaskar; Ganguly, Udayan, Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India. Schulze, Joerg, Univ Stuttgart, Dept Informat Elect Engn \& Informat Technol, D-70174 Stuttgart, Germany.}, author = {Das, Bhaskar and Schulze, Jörg and Ganguly, Udayan}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2eeb40b07e35e8374ce73495e828c1e97/unibiblio}, doi = {10.1109/TED.2018.2846360}, interhash = {3748427b2044969493d1ee414fb7bc8e}, intrahash = {eeb40b07e35e8374ce73495e828c1e97}, issn = {{1557-9646} and {0018-9383}}, journal = {IEEE transactions on electron devices}, keywords = {ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos}, language = {eng}, number = 8, orcid-numbers = {Ganguly, Udayan/0000-0002-1498-5993}, pages = {3414-3420}, publisher = {IEEE}, research-areas = {Engineering; Physics}, timestamp = {2020-03-27T14:39:33.000+0100}, title = {Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode}, unique-id = {ISI:000439649900048}, volume = 65, year = 2018 }