Bitte melden Sie sich an um selbst Rezensionen oder Kommentare zu erstellen.
Zitieren Sie diese Publikation
Mehr Zitationsstile
- bitte auswählen -
%0 Journal Article
%1 journals/mr/AlvaradoBKF10
%A Alvarado, Joaquín
%A Boufouss, El Hafed
%A Kilchytska, Valeria
%A Flandre, Denis
%D 2010
%J Microelectronics Reliability
%K dblp
%N 9-11
%P 1852-1856
%T Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs.
%U http://dblp.uni-trier.de/db/journals/mr/mr50.html#AlvaradoBKF10
%V 50
@article{journals/mr/AlvaradoBKF10,
added-at = {2018-11-30T00:00:00.000+0100},
author = {Alvarado, Joaquín and Boufouss, El Hafed and Kilchytska, Valeria and Flandre, Denis},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27733b0936fd82a621711a5edc7559316/dblp},
ee = {https://doi.org/10.1016/j.microrel.2010.07.040},
interhash = {0a6b72693128afa6f10b7305fef12ad3},
intrahash = {7733b0936fd82a621711a5edc7559316},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = {9-11},
pages = {1852-1856},
timestamp = {2019-09-27T10:58:27.000+0200},
title = {Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr50.html#AlvaradoBKF10},
volume = 50,
year = 2010
}