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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability., , , , and . ESSDERC, page 349-352. IEEE, (2014)Statistical NBTI-effect prediction for ULSI circuits., , , and . ISCAS, page 2494-2497. IEEE, (2010)Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology., , , , , and . IEEE Design & Test, 30 (6): 18-28 (2013)An analytical mismatch model of nano-CMOS device under impact of intrinsic device variability., , , and . ISCAS, page 2257-2260. IEEE, (2011)Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs., , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 32 (12): 2004-2008 (2013)Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters., , , , , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 35 (2): 197-210 (2016)Capturing intrinsic parameter fluctuations using the PSP compact model., , , , , , , and . DATE, page 650-653. IEEE, (2010)Modeling and simulation of transistor and circuit variability and reliability., , , , , , , , and . CICC, page 1-8. IEEE, (2010)Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability., , , , , , and . ESSDERC, page 234-237. IEEE, (2013)Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design., , , , and . ESSDERC, page 113-116. IEEE, (2012)