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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.

X. Wang, B. Cheng, A. Brown, C. Millar, and A. Asenov. ESSDERC, page 349-352. IEEE, (2014)

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Zhe Wang University of Stuttgart

Dr. Dongren Wang University of Stuttgart

Dr. rer. nat. Lei Wang University of Stuttgart

Yi Wang University of Stuttgart

Yao Wang University of Stuttgart

Other publications of authors with the same name

SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.B. Cheng, X. Wang, A. Brown, J. Kuang, D. Reid, C. Millar, S. Nassif, and A. Asenov. ISCAS, page 2339-2342. IEEE, (2013)Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.X. Wang, B. Cheng, A. Brown, C. Millar, and A. Asenov. ESSDERC, page 349-352. IEEE, (2014)A Novel General Compact Model Approach for 7nm Technology Node Circuit Optimization from Device Perspective and Beyond.Q. Huo, Z. Wu, W. Huang, X. Wang, G. Tang, J. Yao, Y. Liu, F. Zhang, L. Li, and M. Liu. CoRR, (2019)Capturing intrinsic parameter fluctuations using the PSP compact model.B. Cheng, D. Dideban, N. Moezi, C. Millar, G. Roy, X. Wang, S. Roy, and A. Asenov. DATE, page 650-653. IEEE, (2010)Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.X. Wang, B. Cheng, A. Brown, C. Millar, J. Kuang, S. Nassif, and A. Asenov. ESSDERC, page 234-237. IEEE, (2013)Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design.X. Wang, B. Cheng, A. Brown, C. Millar, and A. Asenov. ESSDERC, page 113-116. IEEE, (2012)Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP.B. Cheng, D. Dideban, N. Moezi, C. Millar, G. Roy, X. Wang, S. Roy, and A. Asenov. IEEE Design & Test of Computers, 27 (2): 26-35 (2010)Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology.X. Wang, B. Cheng, J. Kuang, A. Brown, C. Millar, and A. Asenov. IEEE Design & Test, 30 (6): 18-28 (2013)Nanowire transistor solutions for 5nm and beyond.A. Asenov, Y. Wang, B. Cheng, X. Wang, P. Asenov, T. Al-Ameri, and V. Georgiev. ISQED, page 269-274. IEEE, (2016)

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Disambiguation of "Wang, Xingsheng"

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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.

Please choose a person to relate this publication to

Zhe Wang University of Stuttgart

Dr. Dongren Wang University of Stuttgart

Dr. rer. nat. Lei Wang University of Stuttgart

Yi Wang University of Stuttgart

Yao Wang University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Wang, Xingsheng"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.

Please choose a person to relate this publication to

Zhe Wang University of Stuttgart

Dr. Dongren Wang University of Stuttgart

Dr. rer. nat. Lei Wang University of Stuttgart

Yi Wang University of Stuttgart

Yao Wang University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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Chicago
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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.